Abstract

The soft turn-on of semiconductor lasers leads to uncertainty in defining and measuring the laser threshold injection current, ${I}_{\rm th}$. Previously, practical calculation algorithms have been developed to achieve high-accuracy measurement of a clearly defined and reproducible quantity which is called ${I}_{\rm th}$. We demonstrate a new and higher accuracy measurement of ${I}_{\rm th}$ using the dependency of the relaxation oscillation frequency on injection current, as compared to the existing standardized approaches. Further, if it is accepted that relaxation oscillations do not occur below laser threshold, this may be regarded as a more fundamentally based definition and measurement method to determine the laser threshold injection current in a semiconductor laser. The method may also be applicable to other types of lasers.

© 2009 IEEE

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