Abstract
A 10-Gbit/s, 1.58-$\mu$m, InGaAlAs electroabsorption modulator (EAM) integrated
distributed-feedback (DFB) laser (EML) with a twin waveguide (TWG) structure
is operated experimentally over a wide temperature range of 0 to 80 $^{\circ}$C. We introduce an InGaAlAs multi-quantum well (MQW) system for
both LD and EAM MQWs, because this material has temperature-tolerant
characteristics. These layers are grown using single step epitaxial growth,
and the device was fabricated with a very simple process. Moreover,
successful transmission through an 80-km single-mode fiber (SMF) was
achieved with the device running at up to 80 $^{\circ}$C. These results confirm the suitability of this type of laser for
use as a cost-effective and low-power consumption light source in 10-Gbit/s
optical network systems.
© 2009 IEEE
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