Abstract
Recent attention has been attracted by photo-detectors integrated onto
silicon-on-insulator (SOI) waveguides that exploit the enhanced sensitivity
to subbandgap wavelengths resulting from absorption via point defects introduced
by ion implantation. In this paper, we present the first model to describe
the carrier generation process of such detectors, based upon modified Shockley-Read-Hall
generation/recombination, and, thus, determine the influence
of the device design on detection efficiency. We further describe how the
model may be incorporated into commercial software, which then simulates the
performance of previously reported devices by assuming a single midgap defect
level (with properties commensurate with the single negatively charged divacancy).
We describe the ability of the model to highlight the major limitations to
responsivity, and thus suggest improvements which diminish the impact of such
limitations.
© 2009 IEEE
PDF Article
More Like This
Silicon-on-insulator sensors using integrated resonance-enhanced defect-mediated photodetectors
Sahba Talebi Fard, Kyle Murray, Michael Caverley, Valentina Donzella, Jonas Flueckiger, Samantha M. Grist, Edgar Huante-Ceron, Shon A. Schmidt, Ezra Kwok, Nicolas A. F. Jaeger, Andrew P. Knights, and Lukas Chrostowski
Opt. Express 22(23) 28517-28529 (2014)
Cited By
You do not have subscription access to this journal. Cited by links are available to subscribers only. You may subscribe either as an Optica member, or as an authorized user of your institution.
Contact your librarian or system administrator
or
Login to access Optica Member Subscription