Evanescent Semiconductor Active Optical Isolators for Low Insertion Loss and High Gain Saturation Power
Journal of Lightwave Technology, Vol. 28, Issue 9, pp. 1414-1419 (2010)
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Abstract
We have designed evanescent semiconductor active optical isolators to realize lower forward transparent current in transverse electric (TE) mode integrable semiconductor active optical isolators with 9.3 dB/mm optical isolation. Evanescent semiconductor active optical isolators are composed of a semiconductor optical amplifier waveguide with an InGaAsP waveguide layers having an Fe layer at its sidewall upon an MQW active layer, allowing TE-mode optical isolation to be realized without etching the MQW active layer unlike conventional TE-mode semiconductor active optical isolators. Evanescent-mode optical isolators enable higher internal quantum efficiency and lower transparent current, compared with conventional TE-mode optical isolators. Furthermore, it was found that the evanescent-mode optical isolators had higher 3 dB saturation output power.
© 2010 IEEE
Citation
Hiromasa Shimizu and Syunsuke Goto, "Evanescent Semiconductor Active Optical Isolators for Low Insertion Loss and High
Gain Saturation Power," J. Lightwave Technol. 28, 1414-1419 (2010)
http://www.opticsinfobase.org/jlt/abstract.cfm?URI=jlt-28-9-1414
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