Investigation of Emission Polarization and Strain in InGaN–GaN Multiple Quantum Wells on Nanorod Epitaxially Lateral Overgrowth Templates
Journal of Lightwave Technology, Vol. 29, Issue 18, pp. 2761-2765 (2011)
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Abstract
Non-polar (a-plane) InGaN–GaN multiple quantum wells (MQWs) on the GaN nanorod epitaxially lateral overgrowth templates with different nanorod height have been fabricated. The average in-plane strain in the InGaN MQWs has been determined from 2.73 x 10-2 to 2.58 x 10-2 while the nanorod height in templates increases from 0 to 1.7 μm. The polarization ratio of the emission from InGaN MQWs varies from 85 % to 53 % along with the increase of the GaN nanorod height. The reduction of polarization ratio has been attributed to the partial strain relaxation within the epitaxial structures as a result of growth on the GaN nanorod templates and the micro-size air-voids observed in the nanorod templates.
© 2011 IEEE
Citation
Huei-Min Huang, Tien-Chang Lu, Chiao-Yun Chang, Shih-Chun Ling, Wei-Wen Chan, Hao-Chung Kuo, and Shing-Chung Wang, "Investigation of Emission Polarization and Strain in InGaN–GaN Multiple Quantum Wells on Nanorod Epitaxially Lateral Overgrowth Templates," J. Lightwave Technol. 29, 2761-2765 (2011)
http://www.opticsinfobase.org/jlt/abstract.cfm?URI=jlt-29-18-2761
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