Abstract
We report on the fabrication and characterization of optical channel waveguide in
<i>x</i>-cut KTiOAsO<sub>4</sub> crystal produced by photographic masking and following direct
O<sup>+</sup>ion implantation at energy of 3.0 MeV and fluence of 5 × 10<sup>13</sup>
ions/cm<sup>2</sup>. Positive changes of both <i>n<sub>x</sub></i> and <i>n<sub>y</sub></i> refractive indices
(corresponding TM and TE polarized light respectively) in the waveguide region are
responsible for light waveguiding. After annealing treatment, the propagation losses of
the waveguide could be reduced to 1.2 dB/cm, exhibiting acceptable guiding
properties.
© 2011 IEEE
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