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Journal of Lightwave Technology

Journal of Lightwave Technology


  • Vol. 30, Iss. 17 — Sep. 1, 2012
  • pp: 2853–2862

All-InGaN Phosphorless White Light Emitting Diodes: An Efficiency Estimation

Christopher Kölper, Matthias Sabathil, Martin Mandl, Martin Strassburg, and Bernd Witzigmann

Journal of Lightwave Technology, Vol. 30, Issue 17, pp. 2853-2862 (2012)

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In this theoretical study we investigate the efficiency potential of monolithic white light emitting diodes (LEDs) that are free of wavelength-converting phosphors and are based solely on the InGaN material system. For that purpose we develop a numerical model that handles multiple active layers of different emission wavelength and takes photon reabsorption and -emission as well as internal non-radiative and optical losses into account. It is applied both to thin film structures as well as novel nanorod LEDs featuring disc-like active layers. In both cases, the active layers may either consist of multiple thin quantum wells or a single thick, bulk-like InGaN layer.

© 2012 IEEE

Christopher Kölper, Matthias Sabathil, Martin Mandl, Martin Strassburg, and Bernd Witzigmann, "All-InGaN Phosphorless White Light Emitting Diodes: An Efficiency Estimation," J. Lightwave Technol. 30, 2853-2862 (2012)

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