Abstract
This paper reports on performances enhancement of photoconductive switches
in term of On/Off ratio and insertion losses. The optimization parameters
on which the research has been focused are gap dimensions reduction to nanometer
scale. The device characterization results up to a microwave frequency of
40 GHz and under CW illumination at a wavelength of 800 nm are presented.
On/Off ratio reveals a value of 13 dB at 20 GHz under 100 mW optical power.
© 2012 IEEE
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