Abstract
This study presents a design of the body contact in an 850 nm Si photodiode (PD)
fabricated using standard 0.18-µm CMOS technology, and presents a systematic
investigation of its effects on PD performance. This study confirms a good PD
performance within 3 V bias and the establishment of the body current by directly
measuring the body current, PD capacitance, and photocurrents. The body current from the
biasing body contact was designed to eliminate the slow diffusion photocarriers in the
substrate and increase bandwidth. The highest responsivity of 1.2 A/W was obtained from
the PD without the body current, with biasing in the avalanche region. Adding the body
bias increased the optimal bandwidth from 2.51 to 3.11 GHz, but reduced responsivity.
However, the operating bias of the Si PD in the avalanche region was high, making it
unsuitable for practical applications. While biasing PD at a low 3 V with a coordinated
body bias, a bandwidth of 2.46 GHz was obtained with an acceptable responsivity of 0.1
A/W to allow low-voltage operation.
© 2013 IEEE
PDF Article
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