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Journal of Lightwave Technology

Journal of Lightwave Technology

| A JOINT IEEE/OSA PUBLICATION

  • Vol. 23, Iss. 12 — Dec. 1, 2005
  • pp: 4215–

Analysis of the Tuning Sensitivity of Silicon-on-Insulator Optical Ring Resonators

Tom Baehr-Jones, Michael Hochberg, Chris Walker, Eric Chan, Dennis Koshinz, William Krug, and Axel Scherer

Journal of Lightwave Technology, Vol. 23, Issue 12, pp. 4215- (2005)


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Abstract

High-quality-factor optical ring resonators have recently been fabricated in thin silicon-on-insulator (SOI). Practical applications of such devices will require careful tuning of the precise location of the resonance peaks. In particular, one often wants to maximize the resonance shift due to the presence of an active component and minimize the resonance shift due to temperature changes. This paper presents a semianalytic formalism that allows the prediction of such resonance shifts from the waveguide geometry. This paper also presents the results of experiments that show the tuning behavior of several ring resonators and find that the proposed semianalytic formalism agrees with the observed behavior.

© 2005 IEEE

Citation
Tom Baehr-Jones, Michael Hochberg, Chris Walker, Eric Chan, Dennis Koshinz, William Krug, and Axel Scherer, "Analysis of the Tuning Sensitivity of Silicon-on-Insulator Optical Ring Resonators," J. Lightwave Technol. 23, 4215- (2005)
http://www.opticsinfobase.org/jlt/abstract.cfm?URI=jlt-23-12-4215

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