A low-power GaAs-based monolithically integrated phototransceiver,consisting of a high-gain heterojunction phototransistor (HPT) and a microcavity light-emitting diode (MCLED) or a low-threshold vertical-cavity surface-emitting laser (VCSEL), is demonstrated. The HPT and MCLED/VCSEL are grown by molecular-beam epitaxy in a single step. The phototransistor exhibits a responsivity of 60A/W at an input power of 1 W. The input and output wavelengths are 850 and 980 nm, respectively. The MCLED-based phototransceiver exhibits an optical gain of 7dB and power dissipation of 400 W for an input power of 1.5 W. The small signal modulation bandwidth is 80 MHz. On the other hand, the VCSEL-based phototransceiver exhibits an optical gain of 10 dB and power dissipation of 760 W for an input power of 2.5 W.
Omar Qasaimeh, Weidong Zhou, Pallab Bhattacharya, Diana Huffaker, and Dennis G. Deppe, "Monolithically Integrated Low-Power Phototransceivers for OptoelectronicParallel Sensing and ProcessingApplications," J. Lightwave Technol. 19, 546- (2001)
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