Monolithically Integrated Low-Power Phototransceivers for OptoelectronicParallel Sensing and ProcessingApplications
Journal of Lightwave Technology, Vol. 19, Issue 4, pp. 546- (2001)
Acrobat PDF (315 KB)
Abstract
A low-power GaAs-based monolithically integrated phototransceiver,consisting of a high-gain heterojunction phototransistor (HPT) and a microcavity light-emitting diode (MCLED) or a low-threshold vertical-cavity surface-emitting laser (VCSEL), is demonstrated. The HPT and MCLED/VCSEL are grown by molecular-beam epitaxy in a single step. The phototransistor exhibits a responsivity of 60A/W at an input power of 1 W. The input and output wavelengths are 850 and 980 nm, respectively. The MCLED-based phototransceiver exhibits an optical gain of 7dB and power dissipation of 400 W for an input power of 1.5 W. The small signal modulation bandwidth is 80 MHz. On the other hand, the VCSEL-based phototransceiver exhibits an optical gain of 10 dB and power dissipation of 760 W for an input power of 2.5 W.
[IEEE ]
Citation
Omar Qasaimeh, Weidong Zhou, Pallab Bhattacharya, Diana Huffaker, and Dennis G. Deppe, "Monolithically Integrated Low-Power Phototransceivers for OptoelectronicParallel Sensing and ProcessingApplications," J. Lightwave Technol. 19, 546- (2001)
http://www.opticsinfobase.org/jlt/abstract.cfm?URI=jlt-19-4-546
You do not have subscription access to this journal. Citation lists with outbound citation links are available to subscribers only. You may subscribe either as an OSA member, or as an authorized user of your institution.
Contact your librarian or system administrator
or
Log in to access OSA Member Subscription
You do not have subscription access to this journal. Cited by links are available to subscribers only. You may subscribe either as an OSA member, or as an authorized user of your institution.
Contact your librarian or system administrator
or
Log in to access OSA Member Subscription
« Previous Article | Next Article »
OSA is a member of 