OSA's Digital Library

Journal of Lightwave Technology

Journal of Lightwave Technology


  • Vol. 19, Iss. 7 — Jul. 1, 2001
  • pp: 1010–

Frequency Response and Modeling of Resonant-Cavity Separate Absorption, Charge, and Multiplication Avalanche Photodiodes

Y. G. Xiao and M. Jamal Deen

Journal of Lightwave Technology, Vol. 19, Issue 7, pp. 1010- (2001)

View Full Text Article

Acrobat PDF (406 KB)

Browse Journals / Lookup Meetings

Browse by Journal and Year


Lookup Conference Papers

Close Browse Journals / Lookup Meetings

Article Tools

  • Export Citation/Save Click for help


A theoretical model incorporating the mechanism of resonant absorption of the multiple reflected lightwaves is presented for the frequency response of resonant-cavity (RC) separate absorption, charge, and multiplication (SACM) avalanche photodiodes (APDs). The derived theoretical expressions are general and can be readily applied to many other RC and non-RC APDs. These analytical expressions also allow for fast computation of the frequency response and bandwidth characteristics. Combining this frequency response theory with expressions of multiplication gain and ionization coefficients, an efficient approach is proposed for modeling the general performance characteristics of RC APDs. The modeling approach is applied to an InGaAs/AlGaAs RC SACM APD. The computed results are demonstrated, and the results of -3 dB bandwidth are comparable to experimental work. The validity of the modeling parameters is also discussed. It is further found that the normalized frequency response is unaffected when the value of the absorption coefficient is changed,suggesting that the standing-wave effect within the RC structure may not influence the bandwidth characteristics.


Y. G. Xiao and M. Jamal Deen, "Frequency Response and Modeling of Resonant-Cavity Separate Absorption, Charge, and Multiplication Avalanche Photodiodes," J. Lightwave Technol. 19, 1010- (2001)

Sort:  Journal  |  Reset


  1. M. M. Hayat and B. E. A. Saleh, "Statistical properties of the impulse response function of double-carrier multiplication avalanche photodiodes including the effect of dead space", J. Lightwave Technol., vol. 10, pp. 1415-1425, Oct. 1992 .
  2. J. N. Hollenhorst, "Frequency response theory for multilayer photodiodes", J. Lightwave Technol., vol. 8, pp. 531-537, Apr. 1990.
  3. B. C. Roy and N. B. Chakrabarti, "Pulse response of avalanche photodiodes", J. Lightwave Technol., vol. 10, pp. 169-181, Feb. 1992 .
  4. J. C. Campbell, B. C. Johnson, G. J. Qua and W. T. Tsang, "Frequency response of InP/InGaAsP/InGaAs avalanche photodiodes", J. Lightwave Technol., vol. 7, pp. 778-784, May 1989.
  5. W. S. Wu, A. R. Hawkins and J. E. Bowers, "Frequency response of avalanche photodetectors with separate absorption and multiplication layers", J. Lightwave Technol., vol. 14, pp. 2778-2785, Dec. 1996.
  6. W. S. Wu, A. R. Hawkins and J. E. Bowers, "Design of silicon heterointerface photodetectors", J. Lightwave Technol., vol. 15, pp. 1608-1615, Aug. 1997.

Cited By

OSA is able to provide readers links to articles that cite this paper by participating in CrossRef's Cited-By Linking service. CrossRef includes content from more than 3000 publishers and societies. In addition to listing OSA journal articles that cite this paper, citing articles from other participating publishers will also be listed.

« Previous Article  |  Next Article »

OSA is a member of CrossRef.

CrossCheck Deposited