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Journal of Lightwave Technology

Journal of Lightwave Technology

| A JOINT IEEE/OSA PUBLICATION

  • Vol. 20, Iss. 3 — Mar. 1, 2002
  • pp: 502–

Submillimeter Wave Generation Through Optical Four-Wave Mixing Using Injection-Locked Semiconductor Lasers

Taraprasad Chattopadhyay and Madhumita Bhattacharya

Journal of Lightwave Technology, Vol. 20, Issue 3, pp. 502- (2002)


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Abstract

This paper presents a comprehensive analysis of submillimeter wave generation through optical four-wave mixing (FWM) in an injection-locked semiconductor laser. The probe wave introduces pump-probe difference frequency amplitude modulation (AM) and phase modulation (PM) of the slave laser injection locked to the pump wave. The AM and PM indexes of the locked laser output lightwave modulated at the submillimeter wave frequency have been calculated. The submillimeter wave power generated through this technique has also been calculated theoretically. The analysis predicts a submillimeter wave power of 3.7~ dBm at 300-GHz frequency for a free-running slave laser output power of 30 mW. In the presence of amplitude modulation of the probe wave, the same modulation is transferred to the submillimeter wave. The suppression of output lightwave amplitude noise relative to the pump, probe, or free-running slave laser amplitude noise has also been estimated in this analysis. At a submillimeter wave frequency of 300 GHz and a probe power equal to the pump power, typical amplitude noise reduction occurs by 7 dB.

[IEEE ]

Citation
Taraprasad Chattopadhyay and Madhumita Bhattacharya, "Submillimeter Wave Generation Through Optical Four-Wave Mixing Using Injection-Locked Semiconductor Lasers," J. Lightwave Technol. 20, 502- (2002)
http://www.opticsinfobase.org/jlt/abstract.cfm?URI=jlt-20-3-502

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