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Journal of Lightwave Technology

Journal of Lightwave Technology

| A JOINT IEEE/OSA PUBLICATION

  • Vol. 20, Iss. 8 — Aug. 1, 2002
  • pp: 1573–

The Effect of the Proton-Concentration-to-Refractive-Index Models on the Propagation Properties of APE Waveguides

Angelo Passaro, Marcos Antonio Ruggieri Franco, Nancy Mieko Abe, and Francisco Sircilli

Journal of Lightwave Technology, Vol. 20, Issue 8, pp. 1573- (2002)


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Abstract

This work analyzes the effect of the proton-concentration-to-refractive-index relation on the computation of waveguiding properties of well-annealed proton-exchanged channel waveguides fabricated in a LiNbO3 substrate. Several of such relations are presented in literature. The application of these different relations in the numerical analysis results in a very different propagation behavior for the waveguide. For comparison purposes, an empirical relation that fits the published refractive-index-versus-proton-concentration experimental data for the α crystalline phase is also used.

[IEEE ]

Citation
Angelo Passaro, Marcos Antonio Ruggieri Franco, Nancy Mieko Abe, and Francisco Sircilli, "The Effect of the Proton-Concentration-to-Refractive-Index Models on the Propagation Properties of APE Waveguides," J. Lightwave Technol. 20, 1573- (2002)
http://www.opticsinfobase.org/jlt/abstract.cfm?URI=jlt-20-8-1573


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References

  1. X. F. Cao, R. V. Ramaswamy and R. Srivastava, "Characterization of annealed proton exchanged LiNbO3 waveguides for nonlinear frequency conversion", J. Lightwave Technol., vol. 10, pp. 1302-1313, Sept. 1992 .
  2. K. M. Kissa, P. G. Suchoski and D. K. Lewis, "Accelerated aging of annealed proton-exchanged waveguides", J. Lightwave Technol., vol. 13, pp. 1521-1529, July 1995.
  3. J. M. White and P. F. Heidrich, "Optical waveguide refractive index profiles determined from measurements of mode indices: A simple analysis", Appl. Opt., vol. 15, pp. 151-155, 1976.
  4. T. Veng and T. Skettrup, "Ion exchange model for α-phase proton exchange waveguides in LiNbO3", J. Lightwave Technol., vol. 16, pp. 646-649, Apr. 1998.

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