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Journal of Lightwave Technology

Journal of Lightwave Technology

| A JOINT IEEE/OSA PUBLICATION

  • Vol. 22, Iss. 12 — Dec. 1, 2004
  • pp: 2828–

Fabrication and Characteristics of High-Speed Oxide-Confined VCSELs Using InGaAsP-InGaP Strain-Compensated MQWs

Ya-Hsien Chang, H. C. Kuo, Fang-I. Lai, Yi-An Chang, C. Y. Lu, L. H. Laih, and S. C. Wang

Journal of Lightwave Technology, Vol. 22, Issue 12, pp. 2828- (2004)


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Abstract

This paper presents the fabrication and characteristics of high-performance 850-nm InGaAsP-InGaP strain-compensated multiple-quantum-well (MQW) vertical-cavity surface-emitting lasers (VCSELs). The InGaAsP-InGaP MQW's composition was optimized through theoretical calculations, and the growth condition was optimized using photoluminescence. These VCSELs exhibit superior performance with characteristics threshold currents ~0.4 mA and slope efficiencies ~0.6 mW/mA. The threshold current change with temperature is less than 0.2 mA, and the slope efficiency drops less than ~30% when the substrate temperature is raised from room temperature to 85 °C. A high modulation bandwidth of 14.5 GHz and a modulation current efficiency factor of 11.6 GHz/(mA)^1/2 are demonstrated. The authors have accumulated life test data up to 1000 h at 70 °C/8 mA .

© 2004 IEEE

Citation
Ya-Hsien Chang, H. C. Kuo, Fang-I. Lai, Yi-An Chang, C. Y. Lu, L. H. Laih, and S. C. Wang, "Fabrication and Characteristics of High-Speed Oxide-Confined VCSELs Using InGaAsP-InGaP Strain-Compensated MQWs," J. Lightwave Technol. 22, 2828- (2004)
http://www.opticsinfobase.org/jlt/abstract.cfm?URI=jlt-22-12-2828


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