This paper presents the fabrication and characteristics of high-performance 850-nm InGaAsP-InGaP strain-compensated multiple-quantum-well (MQW) vertical-cavity surface-emitting lasers (VCSELs). The InGaAsP-InGaP MQW's composition was optimized through theoretical calculations, and the growth condition was optimized using photoluminescence. These VCSELs exhibit superior performance with characteristics threshold currents ~0.4 mA and slope efficiencies ~0.6 mW/mA. The threshold current change with temperature is less than 0.2 mA, and the slope efficiency drops less than ~30% when the substrate temperature is raised from room temperature to 85 °C. A high modulation bandwidth of 14.5 GHz and a modulation current efficiency factor of 11.6 GHz/(mA)^1/2 are demonstrated. The authors have accumulated life test data up to 1000 h at 70 °C/8 mA .
© 2004 IEEE
Ya-Hsien Chang, H. C. Kuo, Fang-I. Lai, Yi-An Chang, C. Y. Lu, L. H. Laih, and S. C. Wang, "Fabrication and Characteristics of High-Speed Oxide-Confined VCSELs Using InGaAsP-InGaP Strain-Compensated MQWs," J. Lightwave Technol. 22, 2828- (2004)