High-index-contrast, wavelength-scale structures are key to ultracompact integration of photonic integrated circuits. The fabrication of these nanophotonic structures in silicon-on-insulator using complementary metal-oxide-seminconductor processing techniques, including deep ultraviolet lithography, was studied. It is concluded that this technology is capable of commercially manufacturing nanophotonic integrated circuits. The possibilities of photonic wires and photonic-crystal waveguides for photonic integration are compared. It is shown that, with similar fabrication techniques, photonic wires perform at least an order of magnitude better than photonic-crystal waveguides with respect to propagation losses. Measurements indicate propagation losses as low as 0.24 dB/mm for photonic wires but 7.5 dB/mm for photonic-crystal waveguides.
© 2005 IEEE
Wim Bogaerts, Roel Baets, Pieter Dumon, Vincent Wiaux, Stephan Beckx, Dirk Taillaert, Bert Luyssaert, Joris Van Campenhout, Peter Bienstman, and Dries Van Thourhout, "Nanophotonic Waveguides in Silicon-on-Insulator Fabricated With CMOS Technology," J. Lightwave Technol. 23, 401- (2005)