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Journal of Lightwave Technology

Journal of Lightwave Technology


  • Vol. 23, Iss. 1 — Jan. 1, 2005
  • pp: 401–

Nanophotonic Waveguides in Silicon-on-Insulator Fabricated With CMOS Technology

Wim Bogaerts, Roel Baets, Pieter Dumon, Vincent Wiaux, Stephan Beckx, Dirk Taillaert, Bert Luyssaert, Joris Van Campenhout, Peter Bienstman, and Dries Van Thourhout

Journal of Lightwave Technology, Vol. 23, Issue 1, pp. 401- (2005)

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High-index-contrast, wavelength-scale structures are key to ultracompact integration of photonic integrated circuits. The fabrication of these nanophotonic structures in silicon-on-insulator using complementary metal-oxide-seminconductor processing techniques, including deep ultraviolet lithography, was studied. It is concluded that this technology is capable of commercially manufacturing nanophotonic integrated circuits. The possibilities of photonic wires and photonic-crystal waveguides for photonic integration are compared. It is shown that, with similar fabrication techniques, photonic wires perform at least an order of magnitude better than photonic-crystal waveguides with respect to propagation losses. Measurements indicate propagation losses as low as 0.24 dB/mm for photonic wires but 7.5 dB/mm for photonic-crystal waveguides.

© 2005 IEEE

Wim Bogaerts, Roel Baets, Pieter Dumon, Vincent Wiaux, Stephan Beckx, Dirk Taillaert, Bert Luyssaert, Joris Van Campenhout, Peter Bienstman, and Dries Van Thourhout, "Nanophotonic Waveguides in Silicon-on-Insulator Fabricated With CMOS Technology," J. Lightwave Technol. 23, 401- (2005)

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