OSA's Digital Library

Journal of Lightwave Technology

Journal of Lightwave Technology

| A JOINT IEEE/OSA PUBLICATION

  • Vol. 23, Iss. 1 — Jan. 1, 2005
  • pp: 423–

Analysis, Circuit Modeling,and Optimization of Mushroom Waveguide Photodetector (Mushroom-WGPD)

Yasser M. El-Batawy and M. Jamal Deen

Journal of Lightwave Technology, Vol. 23, Issue 1, pp. 423- (2005)


View Full Text Article

Acrobat PDF (531 KB)





Browse Journals / Lookup Meetings

Browse by Journal and Year


   


Lookup Conference Papers

Close Browse Journals / Lookup Meetings

Article Tools

Share
Citations
  • Export Citation/Save Click for help

Abstract

The waveguide photodetector (WGPD) is considered a leading candidate to overcome the bandwidth/quantum-efficiency tradeoff in conventional photodetectors (PDs). To overcome the tradeoff between the capacitance and contact resistance,the mushroom-WGPD was proposed. In this paper, a calibrated circuit model for mushroom-WGPD, including all parasitics, is presented so that a complete circuit simulation of the entire photoreceiver circuit with WGPD now becomes feasible. Both the behavior of the PD and its transfer function for the optical-to-electrical response that can be implemented in a circuit simulator are studied to explore the relationships between performance and design/ material parameters. The effects of the parasitics are also studied for different PD areas. The results from this circuit model of the PD have been compared with a published experimental work and a good agreement is obtained. In addition, the characteristics of mushroom-WGPD are studied for the case of an inductor added in series to the load resistor, and better performance is achieved in comparison to the case with no inductor. Based on the studies of different parameters for design and materials, optimization has been performed for the mushroom-WGPD. With this optimization, the optimal values of the thickness of the absorption layer and the added inductor to produce the highest bandwidth of the PD are obtained. These optimizations are performed for different areas of the PD and also for different load resistors, and they result in a significant improvement in the performance of the mushroom-WGPDs.

© 2005 IEEE

Citation
Yasser M. El-Batawy and M. Jamal Deen, "Analysis, Circuit Modeling,and Optimization of Mushroom Waveguide Photodetector (Mushroom-WGPD)," J. Lightwave Technol. 23, 423- (2005)
http://www.opticsinfobase.org/jlt/abstract.cfm?URI=jlt-23-1-423


Sort:  Journal  |  Reset

References

  1. K. Kato and Y. Akatsu, "High-speed waveguide photodetectors", in Proc. 7th Int. Conf. InP Related Materials, May 1995, pp. 349-352.
  2. A. Bandyopadhy and M. J. Deen, "Photodetector for optical fiber communications," in Photodetectors and Fiber Optics, H. S. Nalwa, Ed. New York: Academic, 2001, pp. 307-368.
  3. K. Kato, S. Halta, A. Kozen, J. Yoshida and K. Kawano, "High efficiency waveguide InGaAs PIN photodiode with bandwidth of over 40 GHz", IEEE Photon. Technol. Lett., vol. 3, no. 6, pp. 473-474, Jun. 1991.
  4. D. Wake, T. P. Spooner, S. D. Perrin and M. J. Harlow, "50 GHz InGaAs edge-coupled PIN photodetector", Electron. Lett., vol. 27, pp. 1073-1075, Jun. 1991.
  5. A. Umbach, M. Leone and G. Unterb�rsch, "High-frequency behavior of waveguide integrated photodiodes monolithically integrated on InP using optical butt coupling", J. Appl. Phys., vol. 81, pp. 2511-2516, Mar. 1997.
  6. K. Kato, "Ultrawide-band/high-frequency photodetectors", IEEE Trans. Microwave Theory Tech., vol. 47, no. 7, pp. 1265-1281, Jul. 1999.
  7. S. D. McDougall, M. J. Jubber, O. P. Kowalski, J. H. Marsh and J. S. Aitchison, "GaAs/AlGaAs waveguide pin photodiodes with nonabsorbing input facets fabricated by quantum well intermixing", Electron. Lett., vol. 36, pp. 749-750, Apr. 2000.
  8. G. S. Kinsey, C. C. Hansing, A. L. Holmes Jr., B. G. Streetman, J. C. Campbell and A. G. Dentai, "Waveguide In0.53 Ga0.47 As - In0.52 Al0.48 As avalanche photodiode", IEEE Photon. Technol. Lett., vol. 12, no. 4, pp. 416 -418, Apr. 2000.
  9. N. R. Das, Y. M. El-Batawy and M. J. Deen, "Optoelectronic integrated circuit photoreceivers for fiber-optic telecommunication", in Proc. 1st Int. Symp. Integrated Optoelectronics, Electrochemical Society, vol. PV2002-4, May 2002, pp. 163-194.
  10. K. Kato, S. Hata, K. Kawano, J. Yoshida and A. Kozen, "A high-efficiency 50 GHz InGaAs multimode waveguide photodetector", IEEE J. Quantum Electron., vol. 28, no. 12, pp. 2728-2735, Dec. 1992.
  11. K. Kato and J. Yoshida, "Ultrawide-bandwidth 1.55 � m waveguide p-i-n photodiode", in Proc. SPIE-Int. Soc. Optical Engineering , vol. 2149, 1994, pp. 312-319.
  12. K. Kato, A. Kozen, Y. Muramoto, Y. Itaya, T. Nagatsuma and M. Yatia, "110-GHz, 50%-efficiency mushroom-mesa waveguide p-i-n photodiode for a 1.55-� m wavelength", IEEE Photon. Technol. Lett., vol. 6, no. 6, pp. 719 -721, Jun. 1994.
  13. K. A. Anselm, H. Nie, C. Lenox, P. Yuan, G. Kinsey, J. C. Campbell and B. G. Streetman, "Performance of thin separate absorption, charge and multiplication avalanche photodiodes", IEEE J. Quantum Electron. , vol. 34, no. 3, pp. 482-490, Mar. 1998.
  14. H. Nie, O. Baklenov, P. Yuan, C. Lenox, B. G. Streetman and J. C. Campbell, "Quantum-dot resonant-cavity separate absorption, charge and multiplication avalanche photodiodes operating at 1.06 � m", IEEE Photon. Technol. Lett., vol. 10, no. 7, pp. 1009-1011, Jul. 1998.
  15. Y. M. El-Batawy and M. J. Deen, "Modeling and optimization of resonant cavity enhanced-separated absorption graded charge multiplication-avalanche photodetector (RCE-SAGCM-APD)", IEEE Trans. Electron Devices, vol. 50, no. 3, pp. 790-801, Mar. 2003.
  16. Y. M. El-Batawy, M. J. Deen and N. R. Das, "Analysis, optimization and SPICE modeling of resonant cavity enhanced PIN photodetector", J. Lightw. Technol., vol. 22, no. 9, pp. 2031-2043, Sep. 2003.
  17. Y. M. El-Batawy and M. J. Deen, "Modeling of mushroom waveguide photodetector (mushroom-WGPD)", J. Vac. Sci. Technol., vol. 22, pp. 811-815, May 2004. to be published.
  18. Y. G. Xiao and M. J. Deen, "Theoretical approach to frequency response of resonant-cavity avalanche photodiodes", in Proc. SPIE, Photodetectors: Materials Devices VI, vol. 4288, Jn. 2001, pp. 21-30.
  19. Y. G. Xiao and M. J. Deen, "Frequency response and modeling of resonant-cavity separate absorption, charge and multiplication avalanche photodiodes", J. Lightw. Technol., vol. 19, no. 7, pp. 1010-1022, Jul. 2001.
  20. G. Lucovsky, R. F. Schwarz and R. B. Emmons, "Transit-time considerations in p-i-n diodes", J. Appl. Phys., vol. 35, no. 3, pp. 622-628, Mar. 1964.
  21. D. Huber, R. Bauknecht, C. Bergamaschi, M. Bitter, A. Huber, T. Morf, A. Neiger, M. Rohner, I. Schnyder, V. Schwarz and H. J�ckel, "InP-InGaAs single HBT technology for photoreceiver OEIC's at 40 Gb/s and beyond", J. Lightw. Technol., vol. 18, no. 7, pp. 992-998, Jul. 2000.
  22. K. Yang, A. L. Gutierrez-Aitken, X. Zhang, G. I. Haddad and P. Bhattacharya, "Design, modeling and characterization of monolithically integrated InP-based (1.55 � m) high-speed (24 Gb/s) p-i-n/HBT front-end photoreceivers", J. Lightw. Technol., vol. 14, no. 8, pp. 1831-1839, Aug. 1996.

Cited By

OSA is able to provide readers links to articles that cite this paper by participating in CrossRef's Cited-By Linking service. CrossRef includes content from more than 3000 publishers and societies. In addition to listing OSA journal articles that cite this paper, citing articles from other participating publishers will also be listed.

« Previous Article  |  Next Article »

OSA is a member of CrossRef.

CrossCheck Deposited