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Journal of Lightwave Technology

Journal of Lightwave Technology

| A JOINT IEEE/OSA PUBLICATION

  • Vol. 23, Iss. 8 — Aug. 1, 2005
  • pp: 2455–

Silicon Waveguide Sidewall Smoothing by Wet Chemical Oxidation

Daniel K. Sparacin, Steven J. Spector, and Lionel C. Kimerling

Journal of Lightwave Technology, Vol. 23, Issue 8, pp. 2455- (2005)


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Abstract

This paper reports a new and more efficient Si waveguide sidewall smoothing process using wet chemical oxidation. Sidewall roughness is a major source of loss and an impediment to realizing high-transmission Si waveguides. The postetch multistepped approach allows for efficient smoothing (in terms of roughness amplitude reduction to material consumption) by continuous oxidation in the fast reaction-limited regime. This method reduces waveguide transmission loss without sacrificing dimensional integrity or thermal budget. In this proof-of-concept work, Si waveguide sidewall loss has been reduced from 9.2 to 1.9 dB/cm.

© 2005 IEEE

Citation
Daniel K. Sparacin, Steven J. Spector, and Lionel C. Kimerling, "Silicon Waveguide Sidewall Smoothing by Wet Chemical Oxidation," J. Lightwave Technol. 23, 2455- (2005)
http://www.opticsinfobase.org/jlt/abstract.cfm?URI=jlt-23-8-2455


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References

  1. E. A. J. Marcatili, "Bends in optical dielectric guides", Bell. Syst. Tech. J., vol. 48, no. 7, pp. 2103-2132, 1969.
  2. R. A. Soref, "Silicon-based optoelectronics", in Proc. IEEE (Institute Electrical and Electronic Engineers), New York, 1993, pp. 1687-1705.
  3. L. Pavesi, and D. J. Lockwood, Eds. Silicon Photonics, New York: Springer-Verlag, 2004.
  4. Y. A. Vlasov and S. J. McNab, "Losses in single-mode silicon-on-insulator strip waveguides and bends", Opt. Express, vol. 12, no. 8, p. 8, 2004.
  5. D. K. Sparacin, K. Wada and L. C. Kimerling, "Oxidation kinetics of waveguide roughness minimization in silicon microphotonics", in Optical Soc. Amer. (OSA) Topical Meeting: Integrated Photonics Research, Washington, DC, 2003, pp. 129-131.
  6. S. J. Spector, M. W. Geis, D. M. Lennon, R. C. Williamson and T. M. Lyszczarz, "Hybrid multi-mode/single-mode waveguides for low loss", in Optical Soc. Amer. (OSA) Topical Meeting: Integrated Photonics Research, Tech. Dig., San Francisco, CA,Paper 1ThE5.
  7. K. K. Lee, D. R. Lim and L. C. Kimerling, "Fabrication of ultralow-loss Si/SiO2 waveguides by roughness reduction", Opt. Lett., vol. 26, no. 23, pp. 1888-1890, 2001.
  8. A. Yahata, S. Urano, T. Inoue and T. Shinohe, "Smoothing of Si trench sidewall surface by chemical dry etching and sacrificial oxidation", Jpn. J. Appl. Phys., vol. 37, no. 7, p. 7, 1998.
  9. T. Barwicz and H. I. Smith, "Evolution of line-edge roughness during fabrication of high-index contrast microphotonic devices", J. Vac. Sci. Technol. B, vol. 21, no. 6, pp. 2892-2896, 2003.
  10. D. Marcuse, "Mode conversion caused by surface imperfections of a dielectric slab waveguide", Bell Syst. Tech. J., vol. 48, no. 10, pp. 3187-3215, 1969.
  11. F. Payne and J. Lacey, "A theoretical analysis of scattering loss from planar optical waveguides", Opt. Quantum Electron., vol. 26, no. 10, pp. 977-986, 1994.
  12. K. K. Lee, D. R. Lim, A. M. Agarwal, J. S. Foresi and L. C. Kimerling, "Effect of size and roughness on light transmission in a Si/SO2 waveguide: Experiments and model", Appl. Phys. Lett., vol. 77, no. 11, pp. 1617-1619, 2000.
  13. P. Dumon, W. Bogaerts, V. Wiaux, J. Wouters, S. Beckx, J. Van Campenhout, D. Taillaert, B. Luyssaert, P. Bienstman, D. Van Thourhout and R. Baets, "Low-loss SOI photonic wires and ring resonators fabricates with deep UV lithography", IEEE Photon. Technol. Lett., vol. 16, no. 5, pp. 1328-1330, May 2004.
  14. J. D. Plummer, M. D. Deal and P. B. Griffin, Silicon VLSI Technology, Upper Saddle River, NJ: Prentice-Hall, 2000.
  15. W. Kearn, Handbook of Semiconductor Wafer Cleaning Technology, Park Ridge, NJ: Noyes, 1993.
  16. M. Gotoh, K. Sudoh and H. Iwasaki, "Roughening of the Si/SiO2 interface during SC1-chemical treatment studied by scanning tunneling microscopy", J. Vac. Sci. Technol. B, vol. 18, no. 4, pp. 2165-2168, 2000.
  17. M. Miyashita, T. Tusga, K. Makihara and T. Ohmi, "Dependence of surface microroughness of CZ, FZ and EPI wafers on wet chemical processing", J. Electrochem. Soc., vol. 139, no. 8, pp. 2133-2142, 1992.
  18. L. Lai and E. A. Irene, "Limiting Si/SiO2 interface roughness resulting from thermal oxidation", J. Appl. Phys., vol. 86, no. 3, pp. 1729-1735, 1999.

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