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Journal of Lightwave Technology

Journal of Lightwave Technology

| A JOINT IEEE/OSA PUBLICATION

  • Vol. 23, Iss. 8 — Aug. 1, 2005
  • pp: 2505–

Analysis of Partially Depleted Absorber Waveguide Photodiodes

Stéphane Demiguel, Xiaowei Li, Ning Li, Hao Chen, Joe C. Campbell, Jian Wei, and Alex Anselm

Journal of Lightwave Technology, Vol. 23, Issue 8, pp. 2505- (2005)


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Abstract

This paper presents the analysis and characterization of partially depleted absorber (PDA) photodiodes. Coupling to these photodiodes is achieved through a planar short multimode waveguide (PSMW) structure. Electric transport in the PDA structure has been investigated and an equivalent electric circuit was developed. Measurements on 5 x 20 µm2 PSMW PDA photodiodes have shown 0.80 A/W responsivity with a fiber mode diameter as high as 6 µm. The transverse electric/transverse magnetic polarization dependence was < 0.5 ± 0.3 dB with -1-dB input coupling tolerances as high as ±2.0 and ± 1.3µm for horizontal and vertical directions. The -3-dB bandwidth was 50 GHz, and the -1-dB compression current at 40 GHz was 17 mA corresponding to +4.5 dBm radio frequency (RF) power. Compared to similar evanescently coupled p-i-n photodiodes, the saturation current has been significantly improved while maintaining comparable bandwidth and high responsivity.

© 2005 IEEE

Citation
Stéphane Demiguel, Xiaowei Li, Ning Li, Hao Chen, Joe C. Campbell, Jian Wei, and Alex Anselm, "Analysis of Partially Depleted Absorber Waveguide Photodiodes," J. Lightwave Technol. 23, 2505- (2005)
http://www.opticsinfobase.org/jlt/abstract.cfm?URI=jlt-23-8-2505

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