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Journal of Lightwave Technology

Journal of Lightwave Technology

| A JOINT IEEE/OSA PUBLICATION

  • Vol. 24, Iss. 12 — Dec. 1, 2006
  • pp: 4912–4917

Pattern-Effect Reduction Using a Cross-Gain Modulated Holding Beam in Semiconductor Optical In-Line Amplifier

Ramón Gutiérrez-Castrejón and Adam Filios

Journal of Lightwave Technology, Vol. 24, Issue 12, pp. 4912-4917 (2006)


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Abstract

A novel structure composed of two semiconductor optical amplifiers (SOA) designed to amplify a signal within an optical link is proposed. It is based on the use of a cross-gain modulated holding beam (HB) to reduce the undesirable data pattern-dependent wandering of the amplified signal that is commonly observed in straightforward single-device amplifiers. Using an advanced simulator, patterning of amplified 100-Gb/s pseudorandom bit sequences is minimized in terms of HB input power. A comparison between the proposed scheme and a straightforward amplifier shows outperformance of the former by more than 50% at the expense of 4.1 dB of amplification penalty. The numerical investigations also show inconsequential degradation of the signal extinction ratio. The proposed structure represents a compact alternative to readily reduce patterning in SOA-based high-speed optical communication systems.

© 2006 IEEE

Citation
Ramón Gutiérrez-Castrejón and Adam Filios, "Pattern-Effect Reduction Using a Cross-Gain Modulated Holding Beam in Semiconductor Optical In-Line Amplifier," J. Lightwave Technol. 24, 4912-4917 (2006)
http://www.opticsinfobase.org/jlt/abstract.cfm?URI=jlt-24-12-4912


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