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Journal of Lightwave Technology

Journal of Lightwave Technology

| A JOINT IEEE/OSA PUBLICATION

  • Vol. 24, Iss. 12 — Dec. 1, 2006
  • pp: 5019–5024

Deeply Etched SiO2 Ridge Waveguide for Sharp Bends

Daoxin Dai and Yaocheng Shi

Journal of Lightwave Technology, Vol. 24, Issue 12, pp. 5019-5024 (2006)


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Abstract

A deeply etched SiO2 ridge waveguide including the buffer, core, and cladding is presented for realizing sharp bends. The present SiO2 ridge waveguide has a strong confinement at the lateral direction, while it has a weak confinement at the vertical direction. Due to the strong confinement, a sharp bend (with a very small bending radius of about 10 μm) is obtained for an acceptable bending loss. A detailed analysis of the loss in a bent waveguide is given by using a finite-difference method. In order to reduce the transition loss, a narrow bending section with an optimal lateral offset is used. A low leakage loss is obtained by using wide straight waveguides, and linear tapers are used to connect the wide straight section and narrow bent sections.

© 2006 IEEE

Citation
Daoxin Dai and Yaocheng Shi, "Deeply Etched SiO2 Ridge Waveguide for Sharp Bends," J. Lightwave Technol. 24, 5019-5024 (2006)
http://www.opticsinfobase.org/jlt/abstract.cfm?URI=jlt-24-12-5019

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