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Journal of Lightwave Technology

Journal of Lightwave Technology


  • Vol. 25, Iss. 1 — Jan. 1, 2007
  • pp: 239–248

40-Gb/s Widely Tunable Low-Drive-Voltage Electroabsorption-Modulated Transmitters

James W. Raring, Leif A. Johansson, Erik J. Skogen, Matthew N. Sysak, Henrik N. Poulsen, Steven P. DenBaars, and Larry A. Coldren

Journal of Lightwave Technology, Vol. 25, Issue 1, pp. 239-248 (2007)

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We present the first 40-Gb/s widely tunable electroabsorption modulator (EAM)-based transmitters. The sampled-grating Distributed Bragg Reflector (SG-DBR) laser/EAM devices were fabricated using a multiple-band-edge-quantum-well-intermixing (QWI) technique, which requires only simple blanket regrowth and avoids disruption of the axial waveguide. Devices were fabricated from two different multiple quantum well (MQW) active-region designs for direct comparison. The SG-DBR lasers demonstrated 30 nm of tuning with output powers up to 35 mW. The integrated QW EAMs provided 3-dB optical modulation bandwidths in the 35–39 GHz range, low-drive voltage (1.0–1.5 VPtoP), and low/negative-chirp operation. Bit-error-rate measurements at 40 Gb/s demonstrated 0.2–1.1 dB of power penalty for transmission through 2.3 km of standard fiber.

© 2007 IEEE

James W. Raring, Leif A. Johansson, Erik J. Skogen, Matthew N. Sysak, Henrik N. Poulsen, Steven P. DenBaars, and Larry A. Coldren, "40-Gb/s Widely Tunable Low-Drive-Voltage Electroabsorption-Modulated Transmitters," J. Lightwave Technol. 25, 239-248 (2007)

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