In this paper, an overview and assessment of high-performance receivers based upon Ge-on-silicon-on-insulator (Ge-on-SOI) photodiodes and Si CMOS amplifier ICs is provided. Receivers utilizing Ge-on-SOI lateral p-i-n photodiodes paired with high-gain CMOS amplifiers are shown to operate at 15 Gb/s with a sensitivity of -7.4 dBm (BER=10-12) while utilizing a single supply voltage of only 2.4 V. The 5-Gb/s sensitivity of similar receivers is constant up to 93 °C, and 10-Gb/s operation is demonstrated at 85 °C. Error-free (BER<10-12) operation of receivers combining a Ge-on-SOI photodiode with a single-ended high-speed receiver front end is demonstrated at 19 Gb/s, using a supply voltage of 1.8 V. In addition, receivers utilizing Ge-on-SOI photodiodes integrated with a low-power CMOS IC are shown to operate at 10 Gb/s using a single 1.1-V supply while consuming only 11 mW of power. A perspective on the future technological capabilities and applications of Ge-detector/Si-CMOS receivers is also provided.
© 2007 IEEE
Steven J. Koester, Clint L. Schow, Laurent Schares, Gabriel Dehlinger, Jeremy D. Schaub, Fuad E. Doany, and Richard A. John, "Ge-on-SOI-Detector/Si-CMOS-Amplifier Receivers for High-Performance Optical-Communication Applications," J. Lightwave Technol. 25, 46-57 (2007)