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Journal of Lightwave Technology

Journal of Lightwave Technology

| A JOINT IEEE/OSA PUBLICATION

  • Vol. 25, Iss. 1 — Jan. 1, 2007
  • pp: 46–57

Ge-on-SOI-Detector/Si-CMOS-Amplifier Receivers for High-Performance Optical-Communication Applications

Steven J. Koester, Clint L. Schow, Laurent Schares, Gabriel Dehlinger, Jeremy D. Schaub, Fuad E. Doany, and Richard A. John

Journal of Lightwave Technology, Vol. 25, Issue 1, pp. 46-57 (2007)


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Abstract

In this paper, an overview and assessment of high-performance receivers based upon Ge-on-silicon-on-insulator (Ge-on-SOI) photodiodes and Si CMOS amplifier ICs is provided. Receivers utilizing Ge-on-SOI lateral p-i-n photodiodes paired with high-gain CMOS amplifiers are shown to operate at 15 Gb/s with a sensitivity of -7.4 dBm (BER=10<sup>-12</sup>) while utilizing a single supply voltage of only 2.4 V. The 5-Gb/s sensitivity of similar receivers is constant up to 93 °C, and 10-Gb/s operation is demonstrated at 85 °C. Error-free (BER<10<sup>-12</sup>) operation of receivers combining a Ge-on-SOI photodiode with a single-ended high-speed receiver front end is demonstrated at 19 Gb/s, using a supply voltage of 1.8 V. In addition, receivers utilizing Ge-on-SOI photodiodes integrated with a low-power CMOS IC are shown to operate at 10 Gb/s using a single 1.1-V supply while consuming only 11 mW of power. A perspective on the future technological capabilities and applications of Ge-detector/Si-CMOS receivers is also provided.

© 2007 IEEE

Citation
Steven J. Koester, Clint L. Schow, Laurent Schares, Gabriel Dehlinger, Jeremy D. Schaub, Fuad E. Doany, and Richard A. John, "Ge-on-SOI-Detector/Si-CMOS-Amplifier Receivers for High-Performance Optical-Communication Applications," J. Lightwave Technol. 25, 46-57 (2007)
http://www.opticsinfobase.org/jlt/abstract.cfm?URI=jlt-25-1-46


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