Abstract
This paper presents the high reliability of the guardring-free planar InAlAs avalanche photodiode (APD) and
its degradation mode analysis. We have conducted long-term and high-temperature aging tests under 175
$^{\circ}\hbox{C}$, 200 $^{
\circ}\hbox{C}$, 225 $^{\circ}\hbox{C}$, and 250
$^{\circ}\hbox{C}$. There were three degradation modes as
follows: 1) the increase in the dark current; 2) the decrease in the breakdown voltage; and 3) short circuit. Their
thermal activation energies were 0.96, 1.30, and 0.93 eV, respectively. Their estimated mean times to failures at 85
$^{\circ}\hbox{C}$ are 25, 100, and 22 million hours,
respectively. Increased dark current is generated in the upper side of the absorbing layer. The breakdown voltage
decreased with aging time because the depletion width in the absorbing layer shrinks from the
$\hbox{p}+$ region side. Any degradation mode on the surfaced p-n
junction did not appear in spite of the 10 000-h aging test at a high temperature of 200
$^{\circ}\hbox{C}$. The guardring-free planar InAlAs APD has the
advantage of high reliability because the electric field of a surfaced p-n junction is weakened by the underlying
field control layer.
© 2007 IEEE
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