Abstract
We critically assess recent progress in the integration of near-infrared photodetectors onto nanophotonic
silicon-on-insulator (SOI) waveguide circuits. Integration of thin-film InGaAs photodetectors is studied in detail.
This method consists of bonding unprocessed III–V dies onto the SOI substrate using an intermediate adhesive
layer. Both benzocyclobutene and spin-on glass are studied and compared as bonding agents. After the removal of the
III–V substrate, the thin-film detectors are fabricated using wafer-scale-compatible processes and
lithographically aligned to the underlying SOI waveguides. The process is compatible with the fabrication of
InP/InGaAsP laser diodes on SOI. A new design of an evanescently coupled metal–semiconductor–metal
detector is proposed, proving the ability to obtain compact and highly efficient integrated InGaAs photodetectors.
© 2007 IEEE
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