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Journal of Lightwave Technology

Journal of Lightwave Technology


  • Vol. 25, Iss. 6 — Jun. 1, 2007
  • pp: 1543–1548

Thermal Characterization of Electrically Injected Thin-Film InGaAsP Microdisk Lasers on Si

Joris Van Campenhout, Pedro Rojo-Romeo, Dries Van Thourhout, Christian Seassal, Philippe Regreny, Lea Di Cioccio, Jean-Marc Fedeli, and Roel Baets

Journal of Lightwave Technology, Vol. 25, Issue 6, pp. 1543-1548 (2007)

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We have performed a numerical and experimental analysis of the thermal behavior of electrically injected microdisk lasers that are defined in an InGaAsP-based thin film bonded on top of a silicon wafer. Both the turn-on as well as the pulsed-regime temperature evolution in the lasing region was simulated using the finite-element method. The simulation results are in good agreement with experimental data, which was extracted from the broadening of the time-averaged emission spectra. Lasing at room temperature was only possible in pulsed regime due to the high thermal resistance (10 K/mW). Some strategies to decrease the thermal resistance of the microdisk lasers are proposed and discussed.

© 2007 IEEE

Joris Van Campenhout, Pedro Rojo-Romeo, Dries Van Thourhout, Christian Seassal, Philippe Regreny, Lea Di Cioccio, Jean-Marc Fedeli, and Roel Baets, "Thermal Characterization of Electrically Injected Thin-Film InGaAsP Microdisk Lasers on Si," J. Lightwave Technol. 25, 1543-1548 (2007)

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