Abstract
The set of classical drift-diffusion device equations has
been applied to fully distributed traveling-wave heterojunction phototransistor
structures (TW-HPTs). The two-dimensional physical modeling includes an equivalent
circuit transmission-line solver in common with previous approaches to analyze
traveling-wave devices. The addition of a full physical model has shown for
the first time the potential RC limitations that still exist for transistor
structures in the traveling-wave regime. While efforts can be made to reduce
these limitations, they all have their drawbacks. As such we propose that
the use of HPT gain is better suited to periodically distributed traveling-wave
devices.
© 2008 IEEE
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