Abstract
A 30 GHz bandpass modulator was fabricated on a domain reversed ${\hbox{LiNbO}}_{3}$ substrate.
The circuit effect on current waveforms during wafer-scale poling was analyzed,
and the domain wall movement was precisely controlled in the poling process.
A complementary polarization reversal technique enabled the device
with a single electrode structure to perform balanced modulation. A 60 GHz
optical carrier was generated by double sideband modulation with the suppressed
carrier. The fabricated device showed that carrier suppression was better
than 45 dB and that the power ratio of a 60 GHz spaced two-tone lightwave
signal to the suppressed carrier was 35 dB.
© 2008 IEEE
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