Abstract

A 2-D fully coupled electrothermal physical model of a p-i-n photodiode, which takes into account external electric circuit, has been developed. Based on numerical simulation, we present the data on the maximal output microwave power with appropriate optical-to-microwave conversion loss for InGaAsP/InP partially depleted absorber photodiodes in the frequency range from 10 to 60 GHz.

© 2008 IEEE

Optically heterodyne diagnosis of a high-saturation-power undoped InP sandwiched InGaAs p-i-n photodiode grown on GaAs

Yu-Sheng Liao, Jin-Wei Shi, Y.-S. Wu, Hao-Chung Kuo, M. Feng, and Gong-Ru Lin
Opt. Express 14(12) 5031-5037 (2006)

Simulation of a partially depleted absorber (PDA) photodetector

Yue Hu, Thomas F. Carruthers, Curtis R. Menyuk, Meredith N. Hutchinson, Vincent J. Urick, and Keith J. Williams
Opt. Express 23(16) 20402-20417 (2015)

Design of modified InGaAs/InP one-sided junction photodiodes with improved response at high light intensity

Jie Xu, Xiupu Zhang, and Ahmed Kishk
Appl. Opt. 57(31) 9365-9374 (2018)

Photonic microwave generation with high-power photodiodes

Tara M. Fortier, Franklyn Quinlan, Archita Hati, Craig Nelson, Jennifer A. Taylor, Yang Fu, Joe Campbell, and Scott A. Diddams
Opt. Lett. 38(10) 1712-1714 (2013)

Frequency response and carrier escape time of InGaAs quantum well-dots photodiode

A. E. Zhukov, S. A. Blokhin, N. A. Maleev, N. V. Kryzhanovskaya, E. I. Moiseev, A. M. Nadtochiy, S. A. Mintairov, N. A. Kalyuzhnyy, F. I. Zubov, and M. V. Maximov
Opt. Express 29(25) 40677-40686 (2021)