Slow Light Using P-Doped Semiconductor Heterostructures for High-Bandwidth Nonlinear Signal Processing
Journal of Lightwave Technology, Vol. 26, Issue 23, pp. 3811-3817 (2008)
Acrobat PDF (480 KB)
Abstract
We propose a novel scheme for slow light based on a resonant three-level lambda system (RTLS) in a p-doped semiconductor heterostructure. Numerical simulations show that a slow-down factor of 145 and a slow-down-bandwidth product exceeding 200 THz can be achieved in semiconductor quantum wells at room temperature. These figures of merit make the RTLS slow light especially useful for the enhancement of the optical nonlinearity in high bandwidth all-optical signal processing applications.
© 2008 IEEE
Citation
Dong Sun and Pei-Cheng Ku, "Slow Light Using P-Doped Semiconductor Heterostructures for High-Bandwidth Nonlinear Signal Processing," J. Lightwave Technol. 26, 3811-3817 (2008)
http://www.opticsinfobase.org/jlt/abstract.cfm?URI=jlt-26-23-3811
You do not have subscription access to this journal. Citation lists with outbound citation links are available to subscribers only. You may subscribe either as an OSA member, or as an authorized user of your institution.
Contact your librarian or system administrator
or
Log in to access OSA Member Subscription
You do not have subscription access to this journal. Cited by links are available to subscribers only. You may subscribe either as an OSA member, or as an authorized user of your institution.
Contact your librarian or system administrator
or
Log in to access OSA Member Subscription
OSA is a member of 