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  • Journal of Lightwave Technology
  • Vol. 26,
  • Issue 6,
  • pp. 678-684
  • (2008)

Design Optimization of a SiGe/Si Quantum-Well Optical Modulator

Sylvain Maine, Delphine Marris Morini, Laurent Vivien, Eric Cassan, and Suzanne Laval

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Abstract

In this paper, design optimization of a SiGe/Si quantum-well optical modulator integrated on silicon-on-insulator (SOI) substrate to achieve high-frequency operation is reported. The structure, based on free-carrier depletion in a PIN diode, is integrated in a rib waveguide. Influence of geometrical parameters, layer doping, and metal contacts is determined through numerical simulations and optimized structures are defined. The obtained figure of merit V<sub>π</sub>L<sub>π</sub> is 1.8 V·cm.

© 2008 IEEE

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