Abstract
The influence of p-type and n-type doping on the optical characteristics
of a quantum-dot semiconductor optical amplifier (SOA) is studied using a
rate equation model that takes into account the effect of the multidiscrete
energy levels and the charge neutrality relation. Our calculations show that
the amplifier optical gain can be greatly enhanced through p-type doping where
the doping concentration should not exceed the certain level. We find that
increasing the acceptor concentration increases the unsaturated optical gain
but at the same time decreases the saturation density and the effective relaxation
lifetime. Also our calculation reveals that the use of p-type doping will
be associated with an increase in the transparency current where the increase
in the transparency current depends on the incident photon energy. On the
other hand, we find that it is possible to increase the saturation density
and enhance the linearity of the SOA by using n-type doping.
© 2009 IEEE
PDF Article
More Like This
Cited By
You do not have subscription access to this journal. Cited by links are available to subscribers only. You may subscribe either as an Optica member, or as an authorized user of your institution.
Contact your librarian or system administrator
or
Login to access Optica Member Subscription
Add to BibSonomy