High-Brightness InGaN–GaN Power Flip-Chip LEDs
Journal of Lightwave Technology, Vol. 27, Issue 12, pp. 1985-1989 (2009)
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Abstract
We report the fabrication of InGaN–GaN power flip-chip (FC) light-emitting diodes (LEDs) with a roughened sapphire backside surface prepared by grinding. It was found that we can increase output power of the FC LED by about 35% by roughening the backside surface of the sapphire substrate. The reliability of the proposed device was also better, as compared to power FC LEDs with a conventional flat sapphire backside surface.
© 2009 IEEE
Citation
Shoou-Jinn Chang, W. S. Chen, S. C. Shei, C. T. Kuo, T. K. Ko, C. F. Shen, J. M. Tsai, Wei-Chi Lai, Jinn-Kong Sheu, and A. J. Lin, "High-Brightness InGaN–GaN Power Flip-Chip LEDs," J. Lightwave Technol. 27, 1985-1989 (2009)
http://www.opticsinfobase.org/jlt/abstract.cfm?URI=jlt-27-12-1985
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