Abstract
The electrical and optical characteristics of a 1.3
$\mu$
m GaNAsSbGaAs p-i-n waveguide photodetector (WGPD), consisting of GaAs inner and Al
$_{\rm x}$
Ga
$_{1 - {\rm x}}$
As outer cladding layers, were simulated using a lumped-element model and finite
difference beam propagation method (BPM). The effect of multiple cladding layers' thicknesses and
aluminum composition on the quantum efficiency was investigated to provide design guide and deduce
the range of parameters needed for achieving quantum efficiency higher than 89%. The simulation
shows that a p-i-n waveguide structure with 10
$\mu$
m length, 4
$\mu$
m ridge width, 2.4
$\mu$
m ridge height and 0.4
$\mu$
m GaN
$_{0.033}$
As
$_{0.887}$
Sb
$_{0.08}$
core layer thickness can exhibit a theoretical cut-off frequency limit of over
80 GHz. Maximum quantum efficiency of 91.5% can be obtained for this structure with cladding layer
thickness of 0.5
$\mu$
m for GaAs and 0.5
$\mu$
m for Al
$_{0.7}$
Ga
$_{0.3}$
As.
© 2009 IEEE
PDF Article
More Like This
High responsivity GaNAsSb p-i-n photodetectors at 1.3µm grown by radio-frequency nitrogen plasma-assisted molecular beam epitaxy
K.H. Tan, S.F. Yoon, W.K. Loke, S. Wicaksono, T.K. Ng, K.L. Lew, A. Stöhr, S. Fedderwitz, M. Weiß, D. Jäger, N. Saadsaoud, E. Dogheche, D. Decoster, and J. Chazelas
Opt. Express 16(11) 7720-7725 (2008)
Cited By
You do not have subscription access to this journal. Cited by links are available to subscribers only. You may subscribe either as an Optica member, or as an authorized user of your institution.
Contact your librarian or system administrator
or
Login to access Optica Member Subscription