OSA's Digital Library

Journal of Lightwave Technology

Journal of Lightwave Technology

| A JOINT IEEE/OSA PUBLICATION

  • Vol. 27, Iss. 15 — Aug. 1, 2009
  • pp: 2949–2952

Precision Threshold Current Measurement for Semiconductor Lasers Based on Relaxation Oscillation Frequency

D. M. Kane and Joshua P. Toomey

Journal of Lightwave Technology, Vol. 27, Issue 15, pp. 2949-2952 (2009)


View Full Text Article

Acrobat PDF (109 KB)





Browse Journals / Lookup Meetings

Browse by Journal and Year


   


Lookup Conference Papers

Close Browse Journals / Lookup Meetings

Article Tools

Share
Citations
  • Export Citation/Save Click for help

Abstract

The soft turn-on of semiconductor lasers leads to uncertainty in defining and measuring the laser threshold injection current, ${I}_{\rm th}$. Previously, practical calculation algorithms have been developed to achieve high-accuracy measurement of a clearly defined and reproducible quantity which is called ${I}_{\rm th}$. We demonstrate a new and higher accuracy measurement of ${I}_{\rm th}$ using the dependency of the relaxation oscillation frequency on injection current, as compared to the existing standardized approaches. Further, if it is accepted that relaxation oscillations do not occur below laser threshold, this may be regarded as a more fundamentally based definition and measurement method to determine the laser threshold injection current in a semiconductor laser. The method may also be applicable to other types of lasers.

© 2009 IEEE

Citation
D. M. Kane and Joshua P. Toomey, "Precision Threshold Current Measurement for Semiconductor Lasers Based on Relaxation Oscillation Frequency," J. Lightwave Technol. 27, 2949-2952 (2009)
http://www.opticsinfobase.org/jlt/abstract.cfm?URI=jlt-27-15-2949


Sort:  Year  |  Journal  |  Reset

References

  1. A. E. Siegman, Lasers (University Science Books, 1986).
  2. Bellcore standardIntroduction to Reliability of Laser Diodes and Modules Special Report SR-TSY-001369 http://telecom-info.telcordia.com/ido/AUX/SR_TSY_001369_TOC.i01.pdf available for purchase .
  3. The Differences Between Threshold Current Calculation Methods ILX Lightwave Application Note # 12 http://www.ilxlightwave.com/appnotes/AN_12_REV01_Differences_Between_Threshold_Current_Calculations.pdf.
  4. C. McMahon, D. M. Kane, J. P. Toomey, J. S. Lawrence, "High accuracy measurement of relaxation oscillation frequency in heavily damped quantum well lasers," Proc. Int. Conf. Nanosci. Nanotechnol. (2006) pp. 497-500.
  5. K. Petermann, Laser Diode Modulation and Noise, Advances in Optoelectronics (Kluwer, 1988) pp. 79-80.
  6. C. Y. Jin, H. Y. Liu, T. J. Badcock, K. M. Groom, M. Gutiérrez, R. Royce, M. Hopkinson, D. J. Mowbray, "High-performance 1.3 ${\mu{\hbox{m}}}$ InAs/GaAs quantum-dot lasers with low threshold current and negative characteristic temperature," IEE Proc.-Optoelectron. 153, 280-283 (2006).
  7. B. Docter, T. Segawa, T. Kakitsuka, S. Matsuo, T. Ishii, Y. Kawaguchi, Y. Kondo, H. Suzuki, F. Karouta, M. K. Smit, "Short cavity DBR laser using vertical groove gratings for large-scale photonic integrated circuits," IEEE Photon. Techol. Letts. 19, 1469-1471 (2007).
  8. G. Park, O. B. Shchekin, D. L. Huffaker, D. G. Deppe, "Submilliamp thresholds and ultra-low threshold current density below room temperature," Electron. Lett. 36, 1283-1284 (2000).
  9. K. Y. Lau, P. L. Derry, A. Yariv, "Ultimate limit in low threshold quantum well GaAlAs semiconductor lasers," Appl. Phys. Lett 52, 88-90 (1988).
  10. M. Krakowski, D. Rondi, A. Talneau, Y. Combemale, G. Chevalier, F. Deborgies, P. Maillot, P. Richin, R. Blodeau, L. D'Auria, B. de Gremoux, "Ultra-low-threshold, high bandwidth, very-low-noise operation of 1.52 $\mu{\rm m}$ GaInAsP/InP DFB buried ridge structure laser diodes entirely grown by MOCVD," IEEE J Quantum Electron. 25, 1346-1352 (1989).
  11. H. Z. Chen, A. Ghaffari, H. Wang, H. Morkoc, A. Yariv, "Low threshold ( $\sim 600\ {\rm A/cm}^{2}$ at room temperature) GaAs/AlGaAs lasers on Si(100)," Appl. Phys. Lett 51, 1320-1321 (1987).
  12. Unlocking Dynamical Diversity: Optical Feedback Effects on Semiconductor Lasers (Wiley, 2005).

Cited By

OSA is able to provide readers links to articles that cite this paper by participating in CrossRef's Cited-By Linking service. CrossRef includes content from more than 3000 publishers and societies. In addition to listing OSA journal articles that cite this paper, citing articles from other participating publishers will also be listed.

« Previous Article  |  Next Article »

OSA is a member of CrossRef.

CrossCheck Deposited