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Journal of Lightwave Technology

Journal of Lightwave Technology

| A JOINT IEEE/OSA PUBLICATION

  • Vol. 27, Iss. 18 — Sep. 15, 2009
  • pp: 4076–4083

Fabrication of Photonic Wire and Crystal Circuits in Silicon-on-Insulator Using 193-nm Optical Lithography

Shankar Kumar Selvaraja, Patrick Jaenen, Wim Bogaerts, Dries Van Thourhout, Pieter Dumon, and Roel Baets

Journal of Lightwave Technology, Vol. 27, Issue 18, pp. 4076-4083 (2009)


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Abstract

High-index contrast silicon-on-insulator technology enables wavelength-scale compact photonic circuits. We report fabrication of photonic circuits in silicon-on-insulator using complementary metal-oxide-semiconductor processing technology. By switching from advanced optical lithography at 248 to 193 nm, combined with improved dry etching, a substantial improvement in process window, linearity, and proximity effect is achieved. With the developed fabrication process, propagation and bending loss of photonic wires were characterized. Measurements indicate a propagation loss of 2.7 dB/cm for 500-nm photonic wire and an excess bending loss of 0.013 dB/90$^{\circ}$ bend of 5-$\mu $m radius. Through this paper, we demonstrate the suitability of high resolution optical lithography and dry etch processes for mass production of photonic integrated circuits.

© 2009 IEEE

Citation
Shankar Kumar Selvaraja, Patrick Jaenen, Wim Bogaerts, Dries Van Thourhout, Pieter Dumon, and Roel Baets, "Fabrication of Photonic Wire and Crystal Circuits in Silicon-on-Insulator Using 193-nm Optical Lithography," J. Lightwave Technol. 27, 4076-4083 (2009)
http://www.opticsinfobase.org/jlt/abstract.cfm?URI=jlt-27-18-4076

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