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Journal of Lightwave Technology

Journal of Lightwave Technology

| A JOINT IEEE/OSA PUBLICATION

  • Vol. 27, Iss. 20 — Oct. 15, 2009
  • pp: 4435–4439

A High-Linearity Modified Uni-Traveling Carrier Photodiode With Offset Effects of Nonlinear Capacitance

Huapu Pan, Andreas Beling, Hao Chen, Joe C. Campbell, and P. D. Yoder

Journal of Lightwave Technology, Vol. 27, Issue 20, pp. 4435-4439 (2009)


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Abstract

Third-order intermodulation distortion in an InGaAs/InP charge compensated modified uni-traveling carrier photodiode is characterized using a two-tone setup. Plots of the third-order local intercept point (IP3) versus photocurrent exhibit peaks. A simple analytical model is developed which explains that the peaks are due to the interaction of voltage-dependent and photocurrent-dependent capacitance effects.

© 2009 IEEE

Citation
Huapu Pan, Andreas Beling, Hao Chen, Joe C. Campbell, and P. D. Yoder, "A High-Linearity Modified Uni-Traveling Carrier Photodiode With Offset Effects of Nonlinear Capacitance," J. Lightwave Technol. 27, 4435-4439 (2009)
http://www.opticsinfobase.org/jlt/abstract.cfm?URI=jlt-27-20-4435


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References

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