Abstract
Silicon-on-insulator (SOI) waveguide designs have shown merit in highly
integrated photonic devices and the associated manufacturing technique has
achieved an acceptable level of maturity in the microphotonic industry. Thus,
the sharp bending of SOI waveguides and/or deflection of light between SOI
waveguides are the considerable interest for practical integrated SOI components.
In this paper, a theoretical model is proposed for studying a variety of SOI
rib waveguide corner mirror structures. Using the model, the precise positioning
of the reflector is first studied, then the minimum acceptable reflector length
and width are analyzed, and finally an effective reflecting interface (ERI)
is found and determined by considering Goos-Hanchen effect. After being optimized
with respect to the parameters: dimension (the length and width), position,
surface roughness and tilt angle of mirror plane, and material refractive
index of reflector, and their relations, the transfer efficiency of the corner
mirror can achieve over 96% and 92% at the mirror-plane tilt-angles of respective
0$^{\circ}$ and
1$^{\circ}$ over
a wide range of the corner angles of 80-120$^{\circ}$ even accounting for the 100-Å
surface roughness of reflector is considered. The results of the model are
validated via a full simulation using the commercial software tool: OptiFDTD.
© 2009 IEEE
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