Polarization-Independent Photodetectors With Enhanced Responsivity in a Standard Silicon-on-Insulator Complementary Metal–Oxide–Semiconductor Process
Journal of Lightwave Technology, Vol. 27, Issue 21, pp. 4892-4896 (2009)
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Abstract
A polarization-independent photodetector device is demonstrated that can be combined with electronic integrated circuits on a single chip. The photodetector device is fully compatible with the standard silicon-on-insulator (SOI) complementary metal–oxide–semiconductor (CMOS) process without requiring process modification or postprocessing.
© 2009 IEEE
Citation
N. Moll, T. Morf, M. Fertig, T. Stöferle, B. Trauter, R. F. Mahrt, J. Weiss, T. Pflüger, and K.-H. Brenner, "Polarization-Independent Photodetectors With Enhanced Responsivity in a Standard Silicon-on-Insulator Complementary Metal–Oxide–Semiconductor Process," J. Lightwave Technol. 27, 4892-4896 (2009)
http://www.opticsinfobase.org/jlt/abstract.cfm?URI=jlt-27-21-4892
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