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Journal of Lightwave Technology

Journal of Lightwave Technology

| A JOINT IEEE/OSA PUBLICATION

  • Vol. 27, Iss. 21 — Nov. 1, 2009
  • pp: 4892–4896

Polarization-Independent Photodetectors With Enhanced Responsivity in a Standard Silicon-on-Insulator Complementary Metal–Oxide–Semiconductor Process

N. Moll, T. Morf, M. Fertig, T. Stöferle, B. Trauter, R. F. Mahrt, J. Weiss, T. Pflüger, and K.-H. Brenner

Journal of Lightwave Technology, Vol. 27, Issue 21, pp. 4892-4896 (2009)


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Abstract

A polarization-independent photodetector device is demonstrated that can be combined with electronic integrated circuits on a single chip. The photodetector device is fully compatible with the standard silicon-on-insulator (SOI) complementary metal–oxide–semiconductor (CMOS) process without requiring process modification or postprocessing.

© 2009 IEEE

Citation
N. Moll, T. Morf, M. Fertig, T. Stöferle, B. Trauter, R. F. Mahrt, J. Weiss, T. Pflüger, and K.-H. Brenner, "Polarization-Independent Photodetectors With Enhanced Responsivity in a Standard Silicon-on-Insulator Complementary Metal–Oxide–Semiconductor Process," J. Lightwave Technol. 27, 4892-4896 (2009)
http://www.opticsinfobase.org/jlt/abstract.cfm?URI=jlt-27-21-4892

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