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Journal of Lightwave Technology

Journal of Lightwave Technology

| A JOINT IEEE/OSA PUBLICATION

  • Vol. 27, Iss. 22 — Nov. 15, 2009
  • pp: 5084–5089

10-Gb/s, 80-km SMF Transmission From 0 to 80 $^{\circ}$C by Using L-Band InGaAlAs-MQW Electroabsorption Modulated Laser With Twin Waveguide Structure

Wataru Kobayashi, Ken Tsuzuki, Yasuo Shibata, Takayuki Yamanaka, Yasuhiro Kondo, and Fumiyoshi Kano

Journal of Lightwave Technology, Vol. 27, Issue 22, pp. 5084-5089 (2009)


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Abstract

A 10-Gbit/s, 1.58-$\mu$m, InGaAlAs electroabsorption modulator (EAM) integrated distributed-feedback (DFB) laser (EML) with a twin waveguide (TWG) structure is operated experimentally over a wide temperature range of 0 to 80 $^{\circ}$C. We introduce an InGaAlAs multi-quantum well (MQW) system for both LD and EAM MQWs, because this material has temperature-tolerant characteristics. These layers are grown using single step epitaxial growth, and the device was fabricated with a very simple process. Moreover, successful transmission through an 80-km single-mode fiber (SMF) was achieved with the device running at up to 80 $^{\circ}$C. These results confirm the suitability of this type of laser for use as a cost-effective and low-power consumption light source in 10-Gbit/s optical network systems.

© 2009 IEEE

Citation
Wataru Kobayashi, Ken Tsuzuki, Yasuo Shibata, Takayuki Yamanaka, Yasuhiro Kondo, and Fumiyoshi Kano, "10-Gb/s, 80-km SMF Transmission From 0 to 80 $^{\circ}$C by Using L-Band InGaAlAs-MQW Electroabsorption Modulated Laser With Twin Waveguide Structure," J. Lightwave Technol. 27, 5084-5089 (2009)
http://www.opticsinfobase.org/jlt/abstract.cfm?URI=jlt-27-22-5084


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