Abstract
Using photo-induced refractive index variation sol–gel
materials, we fabricated a self-organized lightwave network (SOLNET), which
is a concept of optical waveguides self-organized in photosensitive
materials, whose refractive index increases by write beam exposure. The
refractive index of the sol–gel materials increases from 1.65 to
1.85 when exposed to UV light/blue light and baking. When write beams with a
wavelength of 405 nm are introduced into the sol–gel thin film
under baking at 200 $^{\circ}$C, self-focusing is induced and a SOLNET is formed. In this study,
we evaluated the light confinement effect and coupling efficiencies of the
fabricated SOLNET. The half-width of the output beam spot decreases from
23.8 to 11.8 $\mu$m, and the coupling efficiencies increase as write beam intensity
decreases from 1.0 to 0.1 mW. These results show that SOLNET widths become
narrow when write beam intensity is reduced; thus, SOLNETs formed with a low
write beam intensity produce a strong light confinement effect. Furthermore,
during their formation, SOLNETs were found to be drawn toward reflective
portions of the sol–gel thin film, such as defects or silver paste
droplets, indicating that a reflective SOLNET is formed. We have shown that
photo-induced refractive index variation sol–gel materials are
promising materials for SOLNET fabrication. To create actual connections
between nanoscale optical circuits, further work is necessary to optimize
the baking temperature and write beam intensity required for nanoscale
SOLNET formation.
© 2009 IEEE
PDF Article
More Like This
Cited By
You do not have subscription access to this journal. Cited by links are available to subscribers only. You may subscribe either as an Optica member, or as an authorized user of your institution.
Contact your librarian or system administrator
or
Login to access Optica Member Subscription