Abstract

A novel laser-reformation technique is presented for sidewall smoothing of silicon waveguides. A KrF excimer laser is used to melt and reform the sidewalls to reduce the surface roughness. Atomic-force-microscopy measurement shows that the root-mean-square (rms) roughness is reduced from 14 to 0.24 nm. The calculated scattering loss is reduced to 0.033 dB/cm. The waveguide profile after laser illumination at an incident angle of 75 $^{\circ}$ transforms to a shape of arch. The crystal quality of laser-illuminated silicon wafer characterized by microwave reflection photoconductance-decay carrier lifetimes shows 94% less damage than the furnace-treated wafer.

© 2009 IEEE

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