Abstract
A new method for electrically measuring optical performance degradation
in InP-based semiconductor optical amplifiers (SOAs) is presented. It is shown
that this degradation can be directly qualified through measurements of electrical
subthreshold differential resistance. Experimental measurements are presented
along with a theoretical analysis to demonstrate a proposed aging signature.
Furthermore, two system designs are presented based on using this signature
for enhancing device testability.
© 2009 IEEE
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