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Journal of Lightwave Technology

Journal of Lightwave Technology


  • Vol. 28, Iss. 18 — Sep. 15, 2010
  • pp: 2646–2653

A Fully Analytic Model of Large Area Silicon p-i-n Photodiodes Verified at Short Wavelengths

Sven Loquai, Christian-Alexander Bunge, Olaf Ziemann, Bernhard Schmauss, and Roman Kruglov

Journal of Lightwave Technology, Vol. 28, Issue 18, pp. 2646-2653 (2010)

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A fully analytic analysis of the frequency response of a homo-structure p-i-n photodiode is developed to characterize high-speed large-area p-i-n photodiodes. Therefore, the model can easily be implemented in mathematical simulation tools for system analysis. The model accurately describes drift-, diffusion- and parasitic effects and has been experimentally verified up to 3 GHz for a variety of different wavelength from 405 nm to 850 nm far beyond the 3 dB cutoff frequency (up to ${-}$35 dB).

© 2010 IEEE

Sven Loquai, Christian-Alexander Bunge, Olaf Ziemann, Bernhard Schmauss, and Roman Kruglov, "A Fully Analytic Model of Large Area Silicon p-i-n Photodiodes Verified at Short Wavelengths," J. Lightwave Technol. 28, 2646-2653 (2010)

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  1. P. S. Matavulj, D. M. Gvozdic, J. B. Radunovic, "The influence of nonstationary carrier transport on the bandwidth of p-i-n photodiode," J. Lightw. Technol. 15, 2270-2277 (1997).
  2. A. L. Chizh, S. A. Malyshev, "Modeling and characterization of microwave p-i-n photodiode," Proc. 3rd Int. Conf. Adv. Semiconductor Devices Microsyst. (2000) pp. 239-242.
  3. Y. Leblebici, M. Selim Ünlü, S. Kang, B. M. Onat, "Transient simulation of heterojunction photodiodes—Part I: Computational methods," J. Lightw. Technol. 13, 396-405 (1995).
  4. G. Lucovsky, R. F. Schwarz, R. B. Emmons, "Transit-time considerations in p-i-n diodes," J. Appl. Phys. 35, 622-628 (1964).
  5. M. J. N. Sibley, J. Bellon, "Transit-time limitations in p-i-n photodiodes," Microw. Opt. Technol. Lett. 26, 282-286 (2000).
  6. R. Sabella, S. Merli, "Analysis of InGaAs p-i-n photodiode frequency response," IEEE J. Quantum Electron. 29, 906-916 (1993).
  7. D. E. Sawyer, R. H. Rediker, "Narrow base germanium photodiodes," Proc. IRE 46, 1122-1130 (1958).
  8. G. Torrese, A. Salamone, I. Huynen, A. Vander Vorst, "A fully analytic model to describe the high-frequency behavior of p-i-n photodiodes," Microw. Opt. Technol. Lett. 31, 329-333 (2001).
  9. S. Loquai, R. Kruglov, O. Ziemann, J. Vinogradov, C.-A. Bunge, "10 Gbit/s over 25 m plastic optical fiber as a way for extremely low-cost optical interconnection," Proc. OFC (2010).
  10. V. M. Agostinelli, T. J. Bordelon, X. L. Wang, C. F. Yeap, C. M. Maziar, A. F. Tasch, "An energy-dependent two-dimensional substrate current model for the simulation of submicrometer MOSFET's," IEEE Electron Device Lett. 13, 554-556 (1992).
  11. B. Sopori, "Silicon nitride processing for control of optical and electronic properties of silicon solar cells," J. Electron. Mater. 32, 1034-1042 (2003).
  12. M. S. Tyagi, R. Van Overstraeten, "Minority carrier recombination in heavily-doped silicon," Solid-State Electron. 26, 577-597 (1983).
  13. S. M. Sze, K. K. Ng, Physics of Semiconductor Devices (Wiley-Interscience, 2006).
  14. D. E. Aspnes, A. A. Studna, "Dielectric functions and optical parameters of Si, Ge, GaP, GaAs, GaSb, InP, InAs, and InSb from 1.5 to 6.0 eV," Phys. Rev. B, Condens. Matter 27, 985-1009 Jan. 198.

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