OSA's Digital Library

Journal of Lightwave Technology

Journal of Lightwave Technology

| A JOINT IEEE/OSA PUBLICATION

  • Vol. 28, Iss. 18 — Sep. 15, 2010
  • pp: 2646–2653

A Fully Analytic Model of Large Area Silicon p-i-n Photodiodes Verified at Short Wavelengths

Sven Loquai, Christian-Alexander Bunge, Olaf Ziemann, Bernhard Schmauss, and Roman Kruglov

Journal of Lightwave Technology, Vol. 28, Issue 18, pp. 2646-2653 (2010)


View Full Text Article

Acrobat PDF (925 KB)





Browse Journals / Lookup Meetings

Browse by Journal and Year


   


Lookup Conference Papers

Close Browse Journals / Lookup Meetings

Article Tools

Share
Citations
  • Export Citation/Save Click for help

Abstract

A fully analytic analysis of the frequency response of a homo-structure p-i-n photodiode is developed to characterize high-speed large-area p-i-n photodiodes. Therefore, the model can easily be implemented in mathematical simulation tools for system analysis. The model accurately describes drift-, diffusion- and parasitic effects and has been experimentally verified up to 3 GHz for a variety of different wavelength from 405 nm to 850 nm far beyond the 3 dB cutoff frequency (up to ${-}$35 dB).

© 2010 IEEE

Citation
Sven Loquai, Christian-Alexander Bunge, Olaf Ziemann, Bernhard Schmauss, and Roman Kruglov, "A Fully Analytic Model of Large Area Silicon p-i-n Photodiodes Verified at Short Wavelengths," J. Lightwave Technol. 28, 2646-2653 (2010)
http://www.opticsinfobase.org/jlt/abstract.cfm?URI=jlt-28-18-2646


Sort:  Year  |  Journal  |  Reset

References

  1. P. S. Matavulj, D. M. Gvozdic, J. B. Radunovic, "The influence of nonstationary carrier transport on the bandwidth of p-i-n photodiode," J. Lightw. Technol. 15, 2270-2277 (1997).
  2. A. L. Chizh, S. A. Malyshev, "Modeling and characterization of microwave p-i-n photodiode," Proc. 3rd Int. Conf. Adv. Semiconductor Devices Microsyst. (2000) pp. 239-242.
  3. Y. Leblebici, M. Selim Ünlü, S. Kang, B. M. Onat, "Transient simulation of heterojunction photodiodes—Part I: Computational methods," J. Lightw. Technol. 13, 396-405 (1995).
  4. G. Lucovsky, R. F. Schwarz, R. B. Emmons, "Transit-time considerations in p-i-n diodes," J. Appl. Phys. 35, 622-628 (1964).
  5. M. J. N. Sibley, J. Bellon, "Transit-time limitations in p-i-n photodiodes," Microw. Opt. Technol. Lett. 26, 282-286 (2000).
  6. R. Sabella, S. Merli, "Analysis of InGaAs p-i-n photodiode frequency response," IEEE J. Quantum Electron. 29, 906-916 (1993).
  7. D. E. Sawyer, R. H. Rediker, "Narrow base germanium photodiodes," Proc. IRE 46, 1122-1130 (1958).
  8. G. Torrese, A. Salamone, I. Huynen, A. Vander Vorst, "A fully analytic model to describe the high-frequency behavior of p-i-n photodiodes," Microw. Opt. Technol. Lett. 31, 329-333 (2001).
  9. S. Loquai, R. Kruglov, O. Ziemann, J. Vinogradov, C.-A. Bunge, "10 Gbit/s over 25 m plastic optical fiber as a way for extremely low-cost optical interconnection," Proc. OFC (2010).
  10. V. M. Agostinelli, T. J. Bordelon, X. L. Wang, C. F. Yeap, C. M. Maziar, A. F. Tasch, "An energy-dependent two-dimensional substrate current model for the simulation of submicrometer MOSFET's," IEEE Electron Device Lett. 13, 554-556 (1992).
  11. B. Sopori, "Silicon nitride processing for control of optical and electronic properties of silicon solar cells," J. Electron. Mater. 32, 1034-1042 (2003).
  12. M. S. Tyagi, R. Van Overstraeten, "Minority carrier recombination in heavily-doped silicon," Solid-State Electron. 26, 577-597 (1983).
  13. S. M. Sze, K. K. Ng, Physics of Semiconductor Devices (Wiley-Interscience, 2006).
  14. D. E. Aspnes, A. A. Studna, "Dielectric functions and optical parameters of Si, Ge, GaP, GaAs, GaSb, InP, InAs, and InSb from 1.5 to 6.0 eV," Phys. Rev. B, Condens. Matter 27, 985-1009 Jan. 198.

Cited By

OSA is able to provide readers links to articles that cite this paper by participating in CrossRef's Cited-By Linking service. CrossRef includes content from more than 3000 publishers and societies. In addition to listing OSA journal articles that cite this paper, citing articles from other participating publishers will also be listed.

« Previous Article  |  Next Article »

OSA is a member of CrossRef.

CrossCheck Deposited