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Journal of Lightwave Technology

Journal of Lightwave Technology

| A JOINT IEEE/OSA PUBLICATION

  • Vol. 28, Iss. 18 — Sep. 15, 2010
  • pp: 2646–2653

A Fully Analytic Model of Large Area Silicon p-i-n Photodiodes Verified at Short Wavelengths

Sven Loquai, Christian-Alexander Bunge, Olaf Ziemann, Bernhard Schmauss, and Roman Kruglov

Journal of Lightwave Technology, Vol. 28, Issue 18, pp. 2646-2653 (2010)


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Abstract

A fully analytic analysis of the frequency response of a homo-structure p-i-n photodiode is developed to characterize high-speed large-area p-i-n photodiodes. Therefore, the model can easily be implemented in mathematical simulation tools for system analysis. The model accurately describes drift-, diffusion- and parasitic effects and has been experimentally verified up to 3 GHz for a variety of different wavelength from 405 nm to 850 nm far beyond the 3 dB cutoff frequency (up to ${-}$35 dB).

© 2010 IEEE

Citation
Sven Loquai, Christian-Alexander Bunge, Olaf Ziemann, Bernhard Schmauss, and Roman Kruglov, "A Fully Analytic Model of Large Area Silicon p-i-n Photodiodes Verified at Short Wavelengths," J. Lightwave Technol. 28, 2646-2653 (2010)
http://www.opticsinfobase.org/jlt/abstract.cfm?URI=jlt-28-18-2646

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