OSA's Digital Library

Journal of Lightwave Technology

Journal of Lightwave Technology

| A JOINT IEEE/OSA PUBLICATION

  • Vol. 28, Iss. 18 — Sep. 15, 2010
  • pp: 2724–2729

AC Performance of Polysilicon Leaky-Mode MSM Photodetectors

Robert Pownall, Joel Kindt, Phil Nikkel, and Kevin L. Lear

Journal of Lightwave Technology, Vol. 28, Issue 18, pp. 2724-2729 (2010)


View Full Text Article

Acrobat PDF (410 KB)





Browse Journals / Lookup Meetings

Browse by Journal and Year


   


Lookup Conference Papers

Close Browse Journals / Lookup Meetings

Article Tools

Share
Citations
  • Export Citation/Save Click for help

Abstract

Pulse response of polysilicon metal-semiconductor-metal (MSM) photodetectors fabricated in a standard CMOS processes is described, including demonstration of pulse full-width at half-max (FWHM) of 1.32 ns. Pulse FWHM as low as 0.81 ns has been measured, as have 10%–90% rise times of 0.39 ns. Measured detector performance is limited by laser diode modulation capabilities. An analytic expression for the time domain response in the presence of body and contact recombination is reported.

© 2010 IEEE

Citation
Robert Pownall, Joel Kindt, Phil Nikkel, and Kevin L. Lear, "AC Performance of Polysilicon Leaky-Mode MSM Photodetectors," J. Lightwave Technol. 28, 2724-2729 (2010)
http://www.opticsinfobase.org/jlt/abstract.cfm?URI=jlt-28-18-2724


Sort:  Year  |  Journal  |  Reset

References

  1. B. Ackland, B. Razavi, L. West, "A comparison of electrical and optical clock networks in nanometer technologies," IEEE Custom Integrated Circuits Conference (2005).
  2. R. H. Bube, Photoconductivity of Solids (Krieger, 1978).
  3. S. F. Soares, "Photoconductive gain in a Schottky-Barrier photodiode," Jpn. J. Appl. Phys. Part 1-Reg. Papers & Short Notes 31, 210-216 (1992).
  4. M. Klingenstein, J. Kuhl, J. Rosenzweig, C. Moglestue, A. Hulsmann, J. Schneider, K. Kohler, "Photocurrent gain mechanisms in metal-semiconductor-metal photodetectors," Solid-State Electron. 37, 333-340 (1994).
  5. J. Burm, L. F. Eastman, "Low-Frequency gain in MSM photodiodes due to charge accumulation and image force lowering," IEEE Photon. Technol. Lett. 8, 113-115 (1996).
  6. R. F. Pierret, Semiconductor Device Fundamentals (Addison-Wesley, 1996).
  7. R. Pownall, G. Yuan, T. W. Chen, P. Nikkel, K. L. Lear, "Geometry dependence of CMOS-compatible, polysilicon, leaky-mode photodetectors," IEEE Photon. Technol. Lett. 19, 513-515 (2007).
  8. R. Pownall, C. Thangaraj, G. Yuan, P. Nikkel, T. W. Chen, K. L. Lear, "CMOS optoelectronic components for clock distribution," Microelectronic Engineering 87, 1838-1845 (2010).
  9. G. J. Korsh, R. S. Muller, "Conduction properties of lightly doped, polycrystalline silicon," Solid-State Electron. 21, 1045-1051 (1978).
  10. A. K. Ghosh, C. Fishman, T. Feng, "Theory of the electrical and photo-voltaic properties of polycrystalline silicon," J. Appl. Phys. 51, 446-454 (1980).
  11. A. Valletta, P. Gaucci, L. Mariucci, G. Fortunato, "Modelling velocity saturation effects in polysilicon thin-film transistors," Jpn. J. Appl. Phys. Part 1-Reg. Papers Brief Commun. & Rev. Papers 45, 4374-4377 (2006).
  12. P. Panayotatos, H. C. Card, "Recombination velocity at grain-boundaries in polycrystalline Si under optical illumination," IEEE Electron Device Lett. 1, 263-266 (1980).
  13. H. C. Card, E. S. Yang, "Electronic processes at grain-boundaries in polycrystalline semiconductors under optical illumination," IEEE Trans. Electron Devices TED-24, 397-402 (1977).
  14. S. M. Sze, Physics of Semiconductor Devices (Wiley-Interscience, 1981).

Cited By

OSA is able to provide readers links to articles that cite this paper by participating in CrossRef's Cited-By Linking service. CrossRef includes content from more than 3000 publishers and societies. In addition to listing OSA journal articles that cite this paper, citing articles from other participating publishers will also be listed.

« Previous Article  |  Next Article »

OSA is a member of CrossRef.

CrossCheck Deposited