Abstract
Pulse response of polysilicon metal-semiconductor-metal (MSM)
photodetectors fabricated in a standard CMOS processes is described,
including demonstration of pulse full-width at half-max (FWHM) of 1.32 ns.
Pulse FWHM as low as 0.81 ns has been measured, as have 10%–90%
rise times of 0.39 ns. Measured detector performance is limited by laser
diode modulation capabilities. An analytic expression for the time domain
response in the presence of body and contact recombination is
reported.
© 2010 IEEE
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