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Journal of Lightwave Technology

Journal of Lightwave Technology

| A JOINT IEEE/OSA PUBLICATION

  • Vol. 28, Iss. 18 — Sep. 15, 2010
  • pp: 2724–2729

AC Performance of Polysilicon Leaky-Mode MSM Photodetectors

Robert Pownall, Joel Kindt, Phil Nikkel, and Kevin L. Lear

Journal of Lightwave Technology, Vol. 28, Issue 18, pp. 2724-2729 (2010)


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Abstract

Pulse response of polysilicon metal-semiconductor-metal (MSM) photodetectors fabricated in a standard CMOS processes is described, including demonstration of pulse full-width at half-max (FWHM) of 1.32 ns. Pulse FWHM as low as 0.81 ns has been measured, as have 10%–90% rise times of 0.39 ns. Measured detector performance is limited by laser diode modulation capabilities. An analytic expression for the time domain response in the presence of body and contact recombination is reported.

© 2010 IEEE

Citation
Robert Pownall, Joel Kindt, Phil Nikkel, and Kevin L. Lear, "AC Performance of Polysilicon Leaky-Mode MSM Photodetectors," J. Lightwave Technol. 28, 2724-2729 (2010)
http://www.opticsinfobase.org/jlt/abstract.cfm?URI=jlt-28-18-2724

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