Expand this Topic clickable element to expand a topic
Skip to content
Optica Publishing Group
  • Journal of Lightwave Technology
  • Vol. 28,
  • Issue 18,
  • pp. 2724-2729
  • (2010)

AC Performance of Polysilicon Leaky-Mode MSM Photodetectors

Not Accessible

Your library or personal account may give you access

Abstract

Pulse response of polysilicon metal-semiconductor-metal (MSM) photodetectors fabricated in a standard CMOS processes is described, including demonstration of pulse full-width at half-max (FWHM) of 1.32 ns. Pulse FWHM as low as 0.81 ns has been measured, as have 10%–90% rise times of 0.39 ns. Measured detector performance is limited by laser diode modulation capabilities. An analytic expression for the time domain response in the presence of body and contact recombination is reported.

© 2010 IEEE

PDF Article
More Like This
Polysilicon near-infrared photodetector with performance comparable to crystalline silicon devices

Sol Yoon, Kihyun Kim, Hyeonsu Cho, Jun-Sik Yoon, Myoung Jin Lee, M Meyyappan, and Chang-Ki Baek
Opt. Express 25(26) 32910-32918 (2017)

Sub-bandgap polysilicon photodetector in zero-change CMOS process for telecommunication wavelength

Huaiyu Meng, Amir Atabaki, Jason S. Orcutt, and Rajeev J. Ram
Opt. Express 23(25) 32643-32653 (2015)

Asymmetric MSM sub-bandgap all-silicon photodetector with low dark current

M. Casalino, M. Iodice, L. Sirleto, I. Rendina, and G. Coppola
Opt. Express 21(23) 28072-28082 (2013)

Cited By

You do not have subscription access to this journal. Cited by links are available to subscribers only. You may subscribe either as an Optica member, or as an authorized user of your institution.

Contact your librarian or system administrator
or
Login to access Optica Member Subscription

Select as filters


Select Topics Cancel
© Copyright 2024 | Optica Publishing Group. All Rights Reserved