Abstract
This study theoretically and experimentally investigates the highly
directional far-field emission patterns of GaN photonic crystal (PhC)
micro-cavity light-emitting diodes (MCLEDs) depending on varying structural
parameters. Angular-spectra-resolved electroluminescence measurements
reveals the behavior of guided-mode extraction which is significantly
affected by the structural parameters of GaN PhC MCLEDs, where the GaN
cavity thickness decides the extracted guided mode numbers, PhC lattice
constant influences the distribution of far-field emission, and PhC hole
depth affects the interaction with guided modes. The proposed GaN ultrathin
MCLED (uMCLED) with PhC lattice constant of 420 nm and deep hole depth of
250nm exhibited a maximum output light extraction
efficiency of 248% under one-watt input power compared to GaN non-PhC uMCLED
and produced a directional far-field emission pattern at half intensity near ${\pm}17^{\circ}$. The present results indicate that highly directional light
extraction enhancement could contribute to developments of many
applications, especially for etendue-limited applications such as
pico-projectors.
© 2010 IEEE
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