Abstract
Optical properties of B$_{\rm x}$In$_{1 - {\rm x}}$N are calculated as a function of the varying concentration of
Boron and Indium. Indium is gradually replaced by Boron and optical
properties of the resulting materials are studied. The fractional
concentration of Boron is increased gradually from ${\rm x} = 0$ to ${\rm x} = 1$ in steps of 0.25. The bandgap increases with the increasing Boron
concentration, from 0.95 eV for pure InN to 5.6 eV for BN. A unique behavior
of BN in zinc-blend phase is observed, that is, it shifts from indirect to
direct bandgap semiconductor by the substitution of In on B sites. This
behavior can be used to make novel and advanced optical devices. Frequency
dependent reflectivity, absorption coefficient, and optical conductivity of B$_{\rm x}$In$_{1 - {\rm x}}$N are calculated and found to be the constituent's concentration
dependent. The region of reflectivity, absorption coefficient and optical
conductivity shifts from lower frequency into the higher frequency as the
material goes from pure InN to pure BN.
© 2010 IEEE
PDF Article
More Like This
InN-based heterojunction photodetector with extended infrared response
Lung-Hsing Hsu, Chien-Ting Kuo, Jhih-Kai Huang, Shun-Chieh Hsu, Hsin-Ying Lee, Hao-Chung Kuo, Po-Tsung Lee, Yu-Lin Tsai, Yi-Chia Hwang, Chen-Feng Su, Jr-Hau He, Shih-Yen Lin, Yuh-Jen Cheng, and Chien-Chung Lin
Opt. Express 23(24) 31150-31162 (2015)
Cited By
You do not have subscription access to this journal. Cited by links are available to subscribers only. You may subscribe either as an Optica member, or as an authorized user of your institution.
Contact your librarian or system administrator
or
Login to access Optica Member Subscription