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Journal of Lightwave Technology

Journal of Lightwave Technology

| A JOINT IEEE/OSA PUBLICATION

  • Vol. 28, Iss. 22 — Nov. 15, 2010
  • pp: 3266–3272

Cavity Enhanced Internal Photoemission Effect in Silicon Photodiode for Sub-Bandgap Detection

Maurizio Casalino, Giuseppe Coppola, Mariano Gioffrè, Mario Iodice, Luigi Moretti, Ivo Rendina, and Luigi Sirleto

Journal of Lightwave Technology, Vol. 28, Issue 22, pp. 3266-3272 (2010)


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Abstract

In this paper, a new approach for the near infrared sub-bandgap detection in Si-based devices is investigated. In particular, the design, the realization and the characterization of a back illuminated silicon resonant cavity enhanced Schottky photodetectors, working at 1.55 μm, are reported.The photodetectors are constituted by Fabry–Perot microcavity incorporating a Schottky diode. The working principle is based on the internal photoemission effect enhanced by cavity effect. Performances devices in terms of responsivity, free spectral range, finesse and estimated bandwidth are reported.

© 2010 IEEE

Citation
Maurizio Casalino, Giuseppe Coppola, Mariano Gioffrè, Mario Iodice, Luigi Moretti, Ivo Rendina, and Luigi Sirleto, "Cavity Enhanced Internal Photoemission Effect in Silicon Photodiode for Sub-Bandgap Detection," J. Lightwave Technol. 28, 3266-3272 (2010)
http://www.opticsinfobase.org/jlt/abstract.cfm?URI=jlt-28-22-3266

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